4H-SiC neutron sensors based on ion implanted 10B neutron converter layer

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Authors

  • Ludo Vermeeren
  • Fatima Issa
  • Laurent Ottaviani
  • Dora Szalkai
  • Vanessa Vervisch
  • Abdallah Lyoussi
  • Raffaello Ferone
  • Andrej Kuznetsov
  • Mihai Lazar
  • Axel Klix
  • Olivier Palais
  • Anders Hallen

Institutes & Expert groups

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Abstract

In the framework of the I_SMART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, 10B ions have been implanted into the Al metallic contact of a p-n diode to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper.

Details

Original languageEnglish
Title of host publicationIEEE Conference Publications
Subtitle of host publication2015 4th Intl. Conf. ANIMMA
Pages1-5
Number of pages5
ISBN (Electronic)978-1-4799-9918-7
DOIs
Publication statusPublished - 5 May 2016
Event2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - Lisbon, Portugal
Duration: 20 Apr 201524 Apr 2015

Conference

Conference2015 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
CountryPortugal
CityLisbon
Period2015-04-202015-04-24

Keywords

  • neutrons , silicor carbide, semiconductor device

ID: 1668315