A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Authors

  • Cao Ying
  • Marco Van Uffelen
  • Laura Mont Casellas
  • Carlo Damiani
  • Emilio Ruiz Morales
  • Roberto Ranz Santana
  • Richard Meek
  • Bernard Haist
  • Wouter De Cock
  • Ludo Vermeeren
  • Michiel Steyaert
  • Paul Leroux

Institutes & Expert groups

  • KUL - Katholieke Universiteit Leuven
  • Fusion for Energy

Documents & links

Abstract

The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.

Details

Original languageEnglish
Title of host publicationProceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
Place of PublicationMoskow
PublisherIEEE - Institute of Electrical and Electronics Engineers
Pages1-4
Number of pages4
ISBN (Print)978-1-5090-0232-0
DOIs
Publication statusPublished - Jan 2015
Event 2015 - RADECS: 15th European Conference on Radiation and Its Effects on Components and Systems - Moscow, Russian Federation
Duration: 14 Sep 201518 Sep 2015

Conference

Conference 2015 - RADECS
CountryRussian Federation
CityMoscow
Period2015-09-142015-09-18

Keywords

  • Temperature sensors, Bipolar transistors, Leakage currents, CMOS technology, Radiation effects, CMOS integrated circuits, Temperature measurement

ID: 6826658