A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy
Research output: Contribution to report/book/conference proceedings › In-proceedings paper › peer-review
Institutes & Expert groups
- KUL - Katholieke Universiteit Leuven
- Fusion for Energy
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DOI
Abstract
The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.
Details
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) |
| Place of Publication | Moskow |
| Publisher | IEEE - Institute of Electrical and Electronics Engineers |
| Pages | 1-4 |
| Number of pages | 4 |
| ISBN (Print) | 978-1-5090-0232-0 |
| DOIs | |
| Publication status | Published - Jan 2015 |
| Event | 2015 - RADECS: 15th European Conference on Radiation and Its Effects on Components and Systems - Moscow, Russian Federation Duration: 14 Sep 2015 → 18 Sep 2015 |
Conference
| Conference | 2015 - RADECS |
|---|---|
| Country/Territory | Russian Federation |
| City | Moscow |
| Period | 2015-09-14 → 2015-09-18 |
Keywords
- Temperature sensors, Bipolar transistors, Leakage currents, CMOS technology, Radiation effects, CMOS integrated circuits, Temperature measurement
ID: 6826658