A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review

Standard

A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. / Ying, Cao; Van Uffelen, Marco; Mont Casellas, Laura; Damiani, Carlo; Ruiz Morales, Emilio; Ranz Santana, Roberto; Meek, Richard; Haist, Bernard; De Cock, Wouter; Vermeeren, Ludo; Steyaert, Michiel; Leroux, Paul.

Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . Moskow : IEEE - Institute of Electrical and Electronics Engineers, 2015. p. 1-4.

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review

Harvard

Ying, C, Van Uffelen, M, Mont Casellas, L, Damiani, C, Ruiz Morales, E, Ranz Santana, R, Meek, R, Haist, B, De Cock, W, Vermeeren, L, Steyaert, M & Leroux, P 2015, A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. in Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . IEEE - Institute of Electrical and Electronics Engineers, Moskow, pp. 1-4, 2015 - RADECS, Moscow, Russian Federation, 2015-09-14. https://doi.org/10.1109/RADECS.2015.7365575

APA

Ying, C., Van Uffelen, M., Mont Casellas, L., Damiani, C., Ruiz Morales, E., Ranz Santana, R., Meek, R., Haist, B., De Cock, W., Vermeeren, L., Steyaert, M., & Leroux, P. (2015). A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. In Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) (pp. 1-4). IEEE - Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/RADECS.2015.7365575

Vancouver

Ying C, Van Uffelen M, Mont Casellas L, Damiani C, Ruiz Morales E, Ranz Santana R et al. A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. In Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . Moskow: IEEE - Institute of Electrical and Electronics Engineers. 2015. p. 1-4 https://doi.org/10.1109/RADECS.2015.7365575

Author

Ying, Cao ; Van Uffelen, Marco ; Mont Casellas, Laura ; Damiani, Carlo ; Ruiz Morales, Emilio ; Ranz Santana, Roberto ; Meek, Richard ; Haist, Bernard ; De Cock, Wouter ; Vermeeren, Ludo ; Steyaert, Michiel ; Leroux, Paul. / A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy. Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS) . Moskow : IEEE - Institute of Electrical and Electronics Engineers, 2015. pp. 1-4

Bibtex - Download

@inproceedings{79406096bf3b4b558455e90709767a4b,
title = "A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy",
abstract = "The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.",
keywords = "Temperature sensors, Bipolar transistors, Leakage currents, CMOS technology, Radiation effects, CMOS integrated circuits, Temperature measurement",
author = "Cao Ying and {Van Uffelen}, Marco and {Mont Casellas}, Laura and Carlo Damiani and {Ruiz Morales}, Emilio and {Ranz Santana}, Roberto and Richard Meek and Bernard Haist and {De Cock}, Wouter and Ludo Vermeeren and Michiel Steyaert and Paul Leroux",
note = "Score=3; 2015 - RADECS : 15th European Conference on Radiation and Its Effects on Components and Systems ; Conference date: 14-09-2015 Through 18-09-2015",
year = "2015",
month = jan,
doi = "10.1109/RADECS.2015.7365575",
language = "English",
isbn = "978-1-5090-0232-0",
pages = "1--4",
booktitle = "Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)",
publisher = "IEEE - Institute of Electrical and Electronics Engineers",

}

RIS - Download

TY - GEN

T1 - A 1 MGy TID Radiation-Tolerant 56 mu W CMOS Temperature Sensor with +/- 1.7 degrees C accuracy

AU - Ying, Cao

AU - Van Uffelen, Marco

AU - Mont Casellas, Laura

AU - Damiani, Carlo

AU - Ruiz Morales, Emilio

AU - Ranz Santana, Roberto

AU - Meek, Richard

AU - Haist, Bernard

AU - De Cock, Wouter

AU - Vermeeren, Ludo

AU - Steyaert, Michiel

AU - Leroux, Paul

N1 - Score=3

PY - 2015/1

Y1 - 2015/1

N2 - The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.

AB - The total-ionizing-dose (TID) radiation tolerance of CMOS temperature sensors is generally limited by the radiation-introduced leakage current in diodes. A dynamic base leakage compensation technique is employed to improve the radiation hardness of the CMOS temperature sensor. The fabricated temperature sensor achieves an accuracy of ±1.7°C from -40°C to 125°C, while the power and area consumption are only 56 μW and 0.07 mm2, respectively. The temperature sensor is assessed with a gamma irradiation experiment with a dose rate of 1 kGy/h, and radiation induced temperature readout drifts are smaller than 0.2% after 1 MGy.

KW - Temperature sensors

KW - Bipolar transistors

KW - Leakage currents

KW - CMOS technology

KW - Radiation effects

KW - CMOS integrated circuits

KW - Temperature measurement

UR - https://ecm.sckcen.be/OTCS/llisapi.dll?func=Edit.Edit&nodeid=38908743&ReadOnly=True&uiType=1&viewType=1

U2 - 10.1109/RADECS.2015.7365575

DO - 10.1109/RADECS.2015.7365575

M3 - In-proceedings paper

SN - 978-1-5090-0232-0

SP - 1

EP - 4

BT - Proceedings of the 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

PB - IEEE - Institute of Electrical and Electronics Engineers

CY - Moskow

T2 - 2015 - RADECS

Y2 - 14 September 2015 through 18 September 2015

ER -

ID: 6826658