Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor

Research output: Contribution to journal › Article

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Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor. / Vande Pitte, Jonas; Uytdenhouwen, Inge; Wagemans, Jan; Uytdenhouwen, Inge (Peer reviewer); Detavernier, C.; j., Lauwaert; Gusarov, Andrei.

In: Materials Science Forum, Vol. 963, No. 662-9752, 19.07.2019, p. 362-366.

Research output: Contribution to journal › Article

Harvard

Vande Pitte, J, Uytdenhouwen, I, Wagemans, J, Uytdenhouwen, I, Detavernier, C, j., L & Gusarov, A 2019, 'Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor', Materials Science Forum, vol. 963, no. 662-9752, pp. 362-366. https://doi.org/10.4028/www.scientific.net/MSF.963.362

APA

Vande Pitte, J., Uytdenhouwen, I., Wagemans, J., Uytdenhouwen, I., Detavernier, C., j., L., & Gusarov, A. (2019). Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor. Materials Science Forum, 963(662-9752), 362-366. https://doi.org/10.4028/www.scientific.net/MSF.963.362

Vancouver

Vande Pitte J, Uytdenhouwen I, Wagemans J, Uytdenhouwen I, Detavernier C, j. L et al. Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor. Materials Science Forum. 2019 Jul 19;963(662-9752):362-366. https://doi.org/10.4028/www.scientific.net/MSF.963.362

Author

Vande Pitte, Jonas ; Uytdenhouwen, Inge ; Wagemans, Jan ; Uytdenhouwen, Inge ; Detavernier, C. ; j., Lauwaert ; Gusarov, Andrei. / Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor. In: Materials Science Forum. 2019 ; Vol. 963, No. 662-9752. pp. 362-366.

Bibtex - Download

@article{708ff85efdbe49649c8c82b024b58e4a,
title = "Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor",
abstract = "Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors",
keywords = "material characterization, irradiation effects, resistivity, irradiation swelling",
author = "{Vande Pitte}, Jonas and Inge Uytdenhouwen and Jan Wagemans and Inge Uytdenhouwen and C. Detavernier and Lauwaert j. and Andrei Gusarov",
note = "Score=10",
year = "2019",
month = "7",
day = "19",
doi = "10.4028/www.scientific.net/MSF.963.362",
language = "English",
volume = "963",
pages = "362--366",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "TTP - Trans Tech Publications",
number = "662-9752",

}

RIS - Download

TY - JOUR

T1 - Characterization of -Silicon Carbide for Potential Use as Irradiation Temperature Monitor

AU - Vande Pitte, Jonas

AU - Uytdenhouwen, Inge

AU - Wagemans, Jan

AU - Detavernier, C.

AU - j., Lauwaert

AU - Gusarov, Andrei

A2 - Uytdenhouwen, Inge

N1 - Score=10

PY - 2019/7/19

Y1 - 2019/7/19

N2 - Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors

AB - Post-irradiation data on the neutron-induced swelling behaviour and resistivity changes in silicon carbide often does not show a clear trend. This makes a quantitative comparison between different studies difficult. To address the diverging results after irradiation in different studies, a thorough reference study is performed on high quality -silicon carbide. The results show the response to neutron irradiation may be significantly influenced by structural defects present before irradiation. These findings open a way to improve the accuracy of silicon carbide irradiation temperature monitors

KW - material characterization

KW - irradiation effects

KW - resistivity

KW - irradiation swelling

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/37188170

U2 - 10.4028/www.scientific.net/MSF.963.362

DO - 10.4028/www.scientific.net/MSF.963.362

M3 - Article

VL - 963

SP - 362

EP - 366

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

IS - 662-9752

ER -

ID: 6029878