Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide

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Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide. / Musschoot, J.; Deduytsche, D.; Poelman, H.; Haemers, J.; Van Meirhaeghe, R.L.; Van den Berghe, Sven; Detavernier, C.

In: Journal of The Electrochemical Society, Vol. 156, No. 7, 07.2009, p. 122-126.

Research output: Contribution to journalArticlepeer-review

Harvard

Musschoot, J, Deduytsche, D, Poelman, H, Haemers, J, Van Meirhaeghe, RL, Van den Berghe, S & Detavernier, C 2009, 'Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide', Journal of The Electrochemical Society, vol. 156, no. 7, pp. 122-126. https://doi.org/10.1149/1.3133169

APA

Musschoot, J., Deduytsche, D., Poelman, H., Haemers, J., Van Meirhaeghe, R. L., Van den Berghe, S., & Detavernier, C. (2009). Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide. Journal of The Electrochemical Society, 156(7), 122-126. https://doi.org/10.1149/1.3133169

Vancouver

Musschoot J, Deduytsche D, Poelman H, Haemers J, Van Meirhaeghe RL, Van den Berghe S et al. Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide. Journal of The Electrochemical Society. 2009 Jul;156(7):122-126. https://doi.org/10.1149/1.3133169

Author

Musschoot, J. ; Deduytsche, D. ; Poelman, H. ; Haemers, J. ; Van Meirhaeghe, R.L. ; Van den Berghe, Sven ; Detavernier, C. / Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide. In: Journal of The Electrochemical Society. 2009 ; Vol. 156, No. 7. pp. 122-126.

Bibtex - Download

@article{3f7e67e0f0b3454bb51fc1d19760529e,
title = "Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide",
abstract = "Vanadium pentoxide was deposited by atomic layer deposition (ALD) from vanadyl-tri-isopropoxide (VTIP). Water or oxygen was used as a reactive gas in thermal and plasma-enhanced (PE) processes. For PE ALD, there was a wide ALD temperature window from 50 to 200 degrees C. Above 200 degrees C, VTIP decomposed thermally, resulting in the chemical vapor deposition (CVD) of vanadium pentoxide. The PE ALD reactions saturated much faster than during thermal ALD, leading to a growth rate of approximately 0.7 angstrom/cycle during PE ALD using H2O or O-2. Optical emission spectroscopy showed combustion-like reactions during the plasma step. X-ray diffraction was performed to determine the crystallinity of the films after deposition and after postannealing under He or O-2 atmosphere. Films grown with CVD at 300 degrees C and PE O-2 ALD at 150 degrees C were (001)-oriented V2O5 as deposited, while thermal and PE H2O ALD films grown at 150 degrees C were amorphous as deposited. The crystallinity of the PE O-2 ALD could be correlated to its high purity, while the other films had significant carbon contamination, as shown by X-ray photoelectron spectroscopy. Annealing under He led to oxygen-deficient films, while all samples eventually crystallized into V2O5 under O-2.",
keywords = "ATOMIC LAYER DEPOSITION, MAGNETRON-SPUTTERED V2O5, OXIDE THIN-FILMS, ELECTRICAL-PROPERTIES, INSULATOR TRANSITION, OPTICAL-PROPERTIES, OXIDATION, CATALYSTS, BEHAVIOR, ALD",
author = "J. Musschoot and D. Deduytsche and H. Poelman and J. Haemers and {Van Meirhaeghe}, R.L. and {Van den Berghe}, Sven and C. Detavernier",
note = "Score = 10",
year = "2009",
month = jul,
doi = "10.1149/1.3133169",
language = "English",
volume = "156",
pages = "122--126",
journal = "Journal of The Electrochemical Society",
issn = "0013-4651",
publisher = "ECS - The Electrochemical Society",
number = "7",

}

RIS - Download

TY - JOUR

T1 - Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide

AU - Musschoot, J.

AU - Deduytsche, D.

AU - Poelman, H.

AU - Haemers, J.

AU - Van Meirhaeghe, R.L.

AU - Van den Berghe, Sven

AU - Detavernier, C.

N1 - Score = 10

PY - 2009/7

Y1 - 2009/7

N2 - Vanadium pentoxide was deposited by atomic layer deposition (ALD) from vanadyl-tri-isopropoxide (VTIP). Water or oxygen was used as a reactive gas in thermal and plasma-enhanced (PE) processes. For PE ALD, there was a wide ALD temperature window from 50 to 200 degrees C. Above 200 degrees C, VTIP decomposed thermally, resulting in the chemical vapor deposition (CVD) of vanadium pentoxide. The PE ALD reactions saturated much faster than during thermal ALD, leading to a growth rate of approximately 0.7 angstrom/cycle during PE ALD using H2O or O-2. Optical emission spectroscopy showed combustion-like reactions during the plasma step. X-ray diffraction was performed to determine the crystallinity of the films after deposition and after postannealing under He or O-2 atmosphere. Films grown with CVD at 300 degrees C and PE O-2 ALD at 150 degrees C were (001)-oriented V2O5 as deposited, while thermal and PE H2O ALD films grown at 150 degrees C were amorphous as deposited. The crystallinity of the PE O-2 ALD could be correlated to its high purity, while the other films had significant carbon contamination, as shown by X-ray photoelectron spectroscopy. Annealing under He led to oxygen-deficient films, while all samples eventually crystallized into V2O5 under O-2.

AB - Vanadium pentoxide was deposited by atomic layer deposition (ALD) from vanadyl-tri-isopropoxide (VTIP). Water or oxygen was used as a reactive gas in thermal and plasma-enhanced (PE) processes. For PE ALD, there was a wide ALD temperature window from 50 to 200 degrees C. Above 200 degrees C, VTIP decomposed thermally, resulting in the chemical vapor deposition (CVD) of vanadium pentoxide. The PE ALD reactions saturated much faster than during thermal ALD, leading to a growth rate of approximately 0.7 angstrom/cycle during PE ALD using H2O or O-2. Optical emission spectroscopy showed combustion-like reactions during the plasma step. X-ray diffraction was performed to determine the crystallinity of the films after deposition and after postannealing under He or O-2 atmosphere. Films grown with CVD at 300 degrees C and PE O-2 ALD at 150 degrees C were (001)-oriented V2O5 as deposited, while thermal and PE H2O ALD films grown at 150 degrees C were amorphous as deposited. The crystallinity of the PE O-2 ALD could be correlated to its high purity, while the other films had significant carbon contamination, as shown by X-ray photoelectron spectroscopy. Annealing under He led to oxygen-deficient films, while all samples eventually crystallized into V2O5 under O-2.

KW - ATOMIC LAYER DEPOSITION

KW - MAGNETRON-SPUTTERED V2O5

KW - OXIDE THIN-FILMS

KW - ELECTRICAL-PROPERTIES

KW - INSULATOR TRANSITION

KW - OPTICAL-PROPERTIES

KW - OXIDATION

KW - CATALYSTS

KW - BEHAVIOR

KW - ALD

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_102343

UR - http://knowledgecentre.sckcen.be/so2/bibref/6491

U2 - 10.1149/1.3133169

DO - 10.1149/1.3133169

M3 - Article

VL - 156

SP - 122

EP - 126

JO - Journal of The Electrochemical Society

JF - Journal of The Electrochemical Society

SN - 0013-4651

IS - 7

ER -

ID: 112675