Design and Assessment of a High Gamma-Dose Tolerant VCSEL Driver with Discrete SiGe HBT's

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Abstract

A digital VCSEL driver has been designed, simulated and assessed under radiation, using discrete SiGe HBT's. The circuit tolerates high levels of gamma radiation, up to 12 MGy, features less than 2% drift in the forward current of the VCSEL and operates well above 10MHz. The output duty cycle shows no notable degradation at 200 kHz, enabling the design of robust analog and digital communication systems using pulse-width-modulation (PWM) schemes.

Details

Original languageEnglish
Title of host publicationConférence RADECS 2005 Proceedings
Place of PublicationFrance
Pages1-7
Publication statusPublished - Sep 2007
Event8th European Conference on Radiation and its Effects on Components and Systems - Université Montpellier, Cap d'Agde, France
Duration: 19 Sep 200523 Sep 2005

Conference

Conference8th European Conference on Radiation and its Effects on Components and Systems
CountryFrance
CityCap d'Agde
Period2005-09-192005-09-23

Keywords

  • International Experimental Thermonuclear fusion Reactor (ITER), optical transmitter, laser driver, SiGe HBT, vertical-cavity surface-emitting laser (VCSEL), radiation effects

ID: 248283