Design and assessment of a high gamma-dose tolerant VCSEL driver with discrete SiGe HBTs

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Abstract

A digital VCSEL driver has been designed, simulated and assessed under radiation, using discrete SiGe HBTs. The circuit tolerates high levels of gamma radiation, up to 12 MGy, features less than 2 % drift in the forward current of the VCSEL and operates well above 10 MHz. The output duty cycle shows notable degradation at 200 kHz, enabling the design of robust analog and digital communication systems using pulse-width-modulation (PWM) schemes.

Details

Original languageEnglish
Pages (from-to)2033-2039
JournalIEEE transactions on nuclear Science
Volume53
Issue number4
DOIs
Publication statusPublished - Aug 2006
EventRadiation and its Effects on Components and Systems (RADECS) - IEEE, Cap d'Agde, France
Duration: 19 Sep 200523 Sep 2005

Keywords

  • international experimental thermonuclear fusion reactor (ITER), laser driver, optical transmitter, radiation effects, SiGe HBT, vertical-cavity surface-emitting laser (VCSEL)

ID: 63290