Design and Radiation Assessment of Optoelectronic Transceiver Circuits for ITER

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Abstract

We present the design and characterization results of different electronic building blocks for a MGy gamma radiation tolerant optoelectronic transceiver aiming at ITER applications. The circuits are implemented using the 70GHz fT SiGe HBT in a 0.35µm BiCMOS technology. A VCSEL driver circuit has been designed and measured up to a TID of 1.6 MGy and up to a bit rate of 622Mbps. No significant degradation is seen in the eye opening of the output signal. On the receiver side, both a 1GHz, 3kΩ transimpedance and a 5GHz, 20dB Cherry-Hooper amplifier have been designed.

Details

Original languageEnglish
Title of host publicationProceedings of the 2008 Topical Workshop on Electronics for Particle Physics (TWEPP-08)
Place of PublicationSwitzerland
Pages167-171
Publication statusPublished - Sep 2008
EventTWEPP-08 Topical Workshop on Electronics for Particle Physics - CERN, Naxos, Greece
Duration: 15 Sep 200819 Sep 2008

Conference

ConferenceTWEPP-08 Topical Workshop on Electronics for Particle Physics
CountryGreece
CityNaxos
Period2008-09-152008-09-19

Keywords

  • ITER, optoelectronics, Transceiver, radiation assessment

ID: 274493