Design, Assessment and Modeling of an Integrated 0.4 µm SiGe Bipolar VCSEL Driver under gamma-radiation

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Institutes & Expert groups

Documents & links

Abstract

This paper describes the characterization and SPICE model adaptations for a SiGe Heterojunction Bipolar Transistor (HBT) with a characteristic emitter width of 0.4µm, which is part of the device library in a commercial 0.35µm SiGe BiCMOS technology. The developed model is used to design and validate the operation of an integrated driver for a 1550nm Vertical Cavity Surface-Emitting Laser (VCSEL). The static measurements of the driver during irradiation up to 600 kGy correspond well with the simulations. A second irradiation experiment up to 1.6 MGy allowed us to verify the dynamic operation. Investigation of the eye diagram of the output signal both before and after irradiation revealed no significant signal degradation.

Details

Original languageEnglish
Title of host publicationRADECS 2008 Workshop - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems
Place of PublicationJyväskylä, Finland
Pages53-58
Publication statusPublished - 12 Sep 2008
EventRADECS 2008 Workshop - Jyväskylä, Finland
Duration: 10 Sep 200812 Sep 2008

Conference

ConferenceRADECS 2008 Workshop
CountryFinland
CityJyväskylä
Period2008-09-102008-09-12

Keywords

  • total dose effects, VCSEL driver, gamma-radiation, SiGe HBT, radiation hard, IC design

ID: 216512