Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis

Research output: Contribution to journalArticle

Authors

  • Barbara Karches
  • Jonas Schön
  • Heiko Gerstenberg
  • Gabriele Hampel
  • Patricia Krenckel
  • Christian Plonka
  • Bernard Ponsard
  • Stephan Riepe
  • Christian Stieghorst
  • Norbert Wiehl

Institutes & Expert groups

  • JGU - Johannes Gutenberg University Mainz - Institut für Physik
  • Fraunhofer Institut for Solar Energy Systems ISE - Freiburg
  • TUM - Technical University of Munich

Documents & links

DOI

Abstract

In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations

Details

Original languageEnglish
Pages (from-to)569-576
Number of pages8
JournalRadiochimica Acta
Volume105
Issue number7
DOIs
Publication statusPublished - 1 Oct 2017

Keywords

  • Instrumental Neutron Activiation Analysis, Transition metals, Solar grade silicon, Directional solidification

ID: 5655611