Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Research output: Contribution to journalArticlepeer-review


  • Qi Xie
  • Jan Musschoot
  • Christophe Detavernier
  • Davy Deduytsche
  • Roland L. Van Meirhaeghe
  • Sven Van den Berghe
  • Yu-Long Jiang
  • Guo-Ping Ru
  • Bing-Zong Li
  • Xin-Ping Qu

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Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.


Original languageEnglish
Pages (from-to)2059-2063
JournalMicroelectronic Engineering
Issue number10
Publication statusPublished - Oct 2008
Event12th European Workshop on Materials for Advanced Metallization - Dresden, Germany
Duration: 2 Mar 20085 Mar 2008


  • Atomic layer deposition, TaN, Diffusion barrier, Cu metallization

ID: 73167