Abstract
Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.
Details
Original language | English |
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Pages (from-to) | 2059-2063 |
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Journal | Microelectronic Engineering |
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Volume | 85 |
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Issue number | 10 |
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DOIs | |
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Publication status | Published - Oct 2008 |
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Event | 12th European Workshop on Materials for Advanced Metallization - Dresden, Germany Duration: 2 Mar 2008 → 5 Mar 2008 |
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