Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

Research output: Contribution to journalArticle

Standard

Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. / Xie, Qi; Musschoot, Jan; Detavernier, Christophe; Deduytsche, Davy; Van Meirhaeghe, Roland L.; Van den Berghe, Sven; Jiang, Yu-Long; Ru, Guo-Ping; Li, Bing-Zong; Qu, Xin-Ping.

In: Microelectronic Engineering, Vol. 85, No. 10, 10.2008, p. 2059-2063.

Research output: Contribution to journalArticle

Harvard

Xie, Q, Musschoot, J, Detavernier, C, Deduytsche, D, Van Meirhaeghe, RL, Van den Berghe, S, Jiang, Y-L, Ru, G-P, Li, B-Z & Qu, X-P 2008, 'Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma', Microelectronic Engineering, vol. 85, no. 10, pp. 2059-2063. https://doi.org/10.1016/j.mee.2008.05.026

APA

Xie, Q., Musschoot, J., Detavernier, C., Deduytsche, D., Van Meirhaeghe, R. L., Van den Berghe, S., ... Qu, X-P. (2008). Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. Microelectronic Engineering, 85(10), 2059-2063. https://doi.org/10.1016/j.mee.2008.05.026

Vancouver

Xie Q, Musschoot J, Detavernier C, Deduytsche D, Van Meirhaeghe RL, Van den Berghe S et al. Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. Microelectronic Engineering. 2008 Oct;85(10):2059-2063. https://doi.org/10.1016/j.mee.2008.05.026

Author

Xie, Qi ; Musschoot, Jan ; Detavernier, Christophe ; Deduytsche, Davy ; Van Meirhaeghe, Roland L. ; Van den Berghe, Sven ; Jiang, Yu-Long ; Ru, Guo-Ping ; Li, Bing-Zong ; Qu, Xin-Ping. / Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma. In: Microelectronic Engineering. 2008 ; Vol. 85, No. 10. pp. 2059-2063.

Bibtex - Download

@article{2e453afb09ea4cff99414ae2310b1db1,
title = "Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma",
abstract = "Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.",
keywords = "Atomic layer deposition, TaN, Diffusion barrier, Cu metallization",
author = "Qi Xie and Jan Musschoot and Christophe Detavernier and Davy Deduytsche and {Van Meirhaeghe}, {Roland L.} and {Van den Berghe}, Sven and Yu-Long Jiang and Guo-Ping Ru and Bing-Zong Li and Xin-Ping Qu",
note = "Score = 10",
year = "2008",
month = "10",
doi = "10.1016/j.mee.2008.05.026",
language = "English",
volume = "85",
pages = "2059--2063",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",
number = "10",

}

RIS - Download

TY - JOUR

T1 - Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N-2 or NH3 plasma

AU - Xie, Qi

AU - Musschoot, Jan

AU - Detavernier, Christophe

AU - Deduytsche, Davy

AU - Van Meirhaeghe, Roland L.

AU - Van den Berghe, Sven

AU - Jiang, Yu-Long

AU - Ru, Guo-Ping

AU - Li, Bing-Zong

AU - Qu, Xin-Ping

N1 - Score = 10

PY - 2008/10

Y1 - 2008/10

N2 - Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.

AB - Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma.

KW - Atomic layer deposition

KW - TaN

KW - Diffusion barrier

KW - Cu metallization

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_93620

UR - http://knowledgecentre.sckcen.be/so2/bibref/9361

U2 - 10.1016/j.mee.2008.05.026

DO - 10.1016/j.mee.2008.05.026

M3 - Article

VL - 85

SP - 2059

EP - 2063

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

IS - 10

ER -

ID: 73167