Effect of airgap deep trench isolation on the gamma radiation behavior of a 0.13 μm SiGe: C NPN HBT technology

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Abstract

In-situ measurements during gamma radiation up to 100 kGy of 0.13μm SiGe NPNs featuring airgap deep trench isolation is compared with NPNs using junction isolation. The devices without this deep trench isolation show a higher degradation during irradiation as well in forward mode as in reverse mode operation. The deep trench isolation can prevent the migration of hydrogen towards the emitter-base oxide resulting in lower degradation. In forward mode operation, the base current density shows a clear saturation with total dose. The onset of this saturation starts at 20 kGy. In reverse mode operation no such saturation was observed. A different impact of radiation-induced donor and acceptor traps on the degradation of the base current density could account for this behavior.

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Original languageEnglish
Title of host publicationRADECS 2008 Workshop - Proceedings of the 8th European Workshop on Radiation Effects on Components and Systems
Place of PublicationJyväskylä, Finland
Pages426-431
Publication statusPublished - 12 Sep 2008
EventRADECS 2008 Workshop - Jyväskylä, Finland
Duration: 10 Sep 200812 Sep 2008

Conference

ConferenceRADECS 2008 Workshop
CountryFinland
CityJyväskylä
Period2008-09-102008-09-12

Keywords

  • Deep trench isolation, High level gamma radiation, In-situ measurements, SiGe Heterojunction Bipolar Transistor

ID: 181630