Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices

Research output: Contribution to journalArticlepeer-review


  • Shaoren Deng
  • Qi Xie
  • Davy Deduytsche
  • Marc Schaekers
  • Dennis Lin
  • Matty Caymax
  • Annelies Delabie
  • Sven Van den Berghe
  • Xin-Ping Qu
  • C. Detavernier

Institutes & Expert groups

  • UGent - Universiteit Gent
  • IMEC
  • Fudan University

Documents & links



Metal-oxide-semiconductor capacitor was fabricated using in situ O2 plasma passivation and subsequent deposition of a HfO2 high-k gate stack on Ge. By extracting flat band voltages from capacitors with different equivalent oxide thicknesses (EOT), the effect of forming gas annealing (FGA) and O2 ambient annealing on the fixed charge was systematically investigated. The O2 ambient annealing is more effective than FGA as it reduced fixed charge density to 8.3 × 1011 cm−2 compared to 4.5 × 1012 cm−2 for at the same thermal budget and showed no degradation of EOT. Further, the distribution of fixed charges in gate stack was discussed in detail.
The research leading to these results has received funding from the European Research Council under the European Union’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 239865.


Original languageEnglish
Article number052906
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letter
Issue number5
Publication statusPublished - 3 Aug 2011


  • Atomic layer deposition, Passivation, Dielectric properties, Annealing, MOS devices, Electrical equipment

ID: 6869218