Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation

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Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation. / Alessi, A; Agnello, S; Sporea, DG; Oproiu, C; Brichard, Benoît; Gelardi, FM; Van Uffelen, Marco (Peer reviewer).

In: Journal of Non-Crystalline Solids, Vol. 356, No. 4-5, 02.2010, p. 275-280.

Research output: Contribution to journalArticlepeer-review

Harvard

Alessi, A, Agnello, S, Sporea, DG, Oproiu, C, Brichard, B, Gelardi, FM & Van Uffelen, M 2010, 'Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation', Journal of Non-Crystalline Solids, vol. 356, no. 4-5, pp. 275-280. https://doi.org/10.1016/j.jnoncrysol.2009.11.016

APA

Alessi, A., Agnello, S., Sporea, DG., Oproiu, C., Brichard, B., Gelardi, FM., & Van Uffelen, M. (2010). Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation. Journal of Non-Crystalline Solids, 356(4-5), 275-280. https://doi.org/10.1016/j.jnoncrysol.2009.11.016

Vancouver

Alessi A, Agnello S, Sporea DG, Oproiu C, Brichard B, Gelardi FM et al. Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation. Journal of Non-Crystalline Solids. 2010 Feb;356(4-5):275-280. https://doi.org/10.1016/j.jnoncrysol.2009.11.016

Author

Alessi, A ; Agnello, S ; Sporea, DG ; Oproiu, C ; Brichard, Benoît ; Gelardi, FM ; Van Uffelen, Marco. / Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation. In: Journal of Non-Crystalline Solids. 2010 ; Vol. 356, No. 4-5. pp. 275-280.

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@article{46f99ace0d8a4decaf5c1f0d071c755e,
title = "Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation",
abstract = "We report an experimental study on the comparison between the c- or b-ray induced Ge related point defects in Ge-doped silica. Silica samples doped with 2.2 1017 Ge atoms/cm3 produced with the sol–gel technique have been irradiated with c-ray or with b-ray. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E{\textquoteright}Ge, GLPC (Germanium lone pair center) and H(II) point defects. No relevant differences between the concentrations of c- or b-ray induced Ge(1) and E{\textquoteright}Ge point defects have been observed and, in addition, it has been found that both irradiations are able to induce GLPC with the same dose dependence. By contrast, the main difference regards the formation of H(II) centers, their concentration being larger after c irradiation. It is suggested that the larger efficiency of H(II) generation is due to the specific mechanism involving H released by irradiation, whereas the similarity of the formation of other Ge related defects speaks for the occurrence of identical mechanisms induced by c or b irradiation.",
keywords = "Optical spectroscopy defects absorption",
author = "A Alessi and S Agnello and DG Sporea and C Oproiu and Beno{\^i}t Brichard and FM Gelardi and {Van Uffelen}, Marco",
note = "Score = 10",
year = "2010",
month = feb,
doi = "10.1016/j.jnoncrysol.2009.11.016",
language = "English",
volume = "356",
pages = "275--280",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",
number = "4-5",

}

RIS - Download

TY - JOUR

T1 - Formation of optically active oxygen deficient centers in Ge-doped SiO2 by gamma and beta ray irradiation

AU - Alessi, A

AU - Agnello, S

AU - Sporea, DG

AU - Oproiu, C

AU - Brichard, Benoît

AU - Gelardi, FM

A2 - Van Uffelen, Marco

N1 - Score = 10

PY - 2010/2

Y1 - 2010/2

N2 - We report an experimental study on the comparison between the c- or b-ray induced Ge related point defects in Ge-doped silica. Silica samples doped with 2.2 1017 Ge atoms/cm3 produced with the sol–gel technique have been irradiated with c-ray or with b-ray. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E’Ge, GLPC (Germanium lone pair center) and H(II) point defects. No relevant differences between the concentrations of c- or b-ray induced Ge(1) and E’Ge point defects have been observed and, in addition, it has been found that both irradiations are able to induce GLPC with the same dose dependence. By contrast, the main difference regards the formation of H(II) centers, their concentration being larger after c irradiation. It is suggested that the larger efficiency of H(II) generation is due to the specific mechanism involving H released by irradiation, whereas the similarity of the formation of other Ge related defects speaks for the occurrence of identical mechanisms induced by c or b irradiation.

AB - We report an experimental study on the comparison between the c- or b-ray induced Ge related point defects in Ge-doped silica. Silica samples doped with 2.2 1017 Ge atoms/cm3 produced with the sol–gel technique have been irradiated with c-ray or with b-ray. The effects of the irradiation have been investigated by optical absorption, photoluminescence and electron paramagnetic resonance spectroscopy in order to evaluate the generation and the dependence on dose of the Ge(1), E’Ge, GLPC (Germanium lone pair center) and H(II) point defects. No relevant differences between the concentrations of c- or b-ray induced Ge(1) and E’Ge point defects have been observed and, in addition, it has been found that both irradiations are able to induce GLPC with the same dose dependence. By contrast, the main difference regards the formation of H(II) centers, their concentration being larger after c irradiation. It is suggested that the larger efficiency of H(II) generation is due to the specific mechanism involving H released by irradiation, whereas the similarity of the formation of other Ge related defects speaks for the occurrence of identical mechanisms induced by c or b irradiation.

KW - Optical spectroscopy defects absorption

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_103244

UR - http://knowledgecentre.sckcen.be/so2/bibref/6632

U2 - 10.1016/j.jnoncrysol.2009.11.016

DO - 10.1016/j.jnoncrysol.2009.11.016

M3 - Article

VL - 356

SP - 275

EP - 280

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 4-5

ER -

ID: 302090