Geometry and strain dependence of the proton radiation behavior of MuGFET devices

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Geometry and strain dependence of the proton radiation behavior of MuGFET devices. / Put, Sofie; Simoen, Eddy; Collaert, Nadine; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul; Schyns, Marc (Peer reviewer).

In: IEEE transactions on nuclear Science, Vol. 54, No. 6, 12.2007, p. 2227-2232.

Research output: Contribution to journalArticle

Harvard

Put, S, Simoen, E, Collaert, N, Claeys, C, Van Uffelen, M, Leroux, P & Schyns, M 2007, 'Geometry and strain dependence of the proton radiation behavior of MuGFET devices', IEEE transactions on nuclear Science, vol. 54, no. 6, pp. 2227-2232. https://doi.org/10.1109/TNS.2007.911420

Vancouver

Put S, Simoen E, Collaert N, Claeys C, Van Uffelen M, Leroux P et al. Geometry and strain dependence of the proton radiation behavior of MuGFET devices. IEEE transactions on nuclear Science. 2007 Dec;54(6):2227-2232. https://doi.org/10.1109/TNS.2007.911420

Author

Put, Sofie ; Simoen, Eddy ; Collaert, Nadine ; Claeys, Cor ; Van Uffelen, Marco ; Leroux, Paul ; Schyns, Marc. / Geometry and strain dependence of the proton radiation behavior of MuGFET devices. In: IEEE transactions on nuclear Science. 2007 ; Vol. 54, No. 6. pp. 2227-2232.

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@article{2b55a37ccd0a4dc78d756265b1e3756e,
title = "Geometry and strain dependence of the proton radiation behavior of MuGFET devices",
abstract = "The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated. A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors.",
keywords = "Fully depleted, multiple gate transistors, irradiation effects, strain.",
author = "Sofie Put and Eddy Simoen and Nadine Collaert and Cor Claeys and {Van Uffelen}, Marco and Paul Leroux and Marc Schyns",
note = "Score = 10",
year = "2007",
month = "12",
doi = "10.1109/TNS.2007.911420",
language = "English",
volume = "54",
pages = "2227--2232",
journal = "IEEE transactions on nuclear Science",
issn = "0018-9499",
publisher = "IEEE - Institute of Electrical and Electronics Engineers",
number = "6",

}

RIS - Download

TY - JOUR

T1 - Geometry and strain dependence of the proton radiation behavior of MuGFET devices

AU - Put, Sofie

AU - Simoen, Eddy

AU - Collaert, Nadine

AU - Claeys, Cor

AU - Van Uffelen, Marco

AU - Leroux, Paul

A2 - Schyns, Marc

N1 - Score = 10

PY - 2007/12

Y1 - 2007/12

N2 - The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated. A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors.

AB - The proton irradiation effects on n-MuGFET devices with three different geometries (single fin, wide fin and multiple fin) are studied. Also, the effect of tensile strain in the fin on the radiation behavior is investigated. A fundamental difference in the radiation behavior between the non-strained and the strained devices is found. The degradation of the strained devices is most affected by the mobility decrease of the backside transistor. The non-strained devices show a much lesser back gate mobility degradation. For these devices the creation of positive oxide traps is dominant. This shifts the onset of the back channel to lower gate voltages, inducing a transconductance increase at intermediate gate voltages. This effect is less pronounced for single fin MuGFETs. At higher gate voltage, the transconductance decreases for the strained and increases for the non-strained transistors.

KW - Fully depleted

KW - multiple gate transistors

KW - irradiation effects

KW - strain.

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_88071

UR - http://knowledgecentre.sckcen.be/so2/bibref/5762

U2 - 10.1109/TNS.2007.911420

DO - 10.1109/TNS.2007.911420

M3 - Article

VL - 54

SP - 2227

EP - 2232

JO - IEEE transactions on nuclear Science

JF - IEEE transactions on nuclear Science

SN - 0018-9499

IS - 6

ER -

ID: 144782