High total dose gamma radiation assessment of commercially available SiGe Heterojunction Bipolar Transistors

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High total dose gamma radiation assessment of commercially available SiGe Heterojunction Bipolar Transistors. / Van Uffelen, Marco; Geboers, Sam; Leroux, Paul; Berghmans, Francis.

Proceedings of SPIE. Bellingham, United States, 2005. p. 58970-1.

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review

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Van Uffelen, M, Geboers, S, Leroux, P & Berghmans, F 2005, High total dose gamma radiation assessment of commercially available SiGe Heterojunction Bipolar Transistors. in Proceedings of SPIE. Bellingham, United States, pp. 58970-1, Photonics for Space Environments X, Bellingham, United States, 2005-08-25.

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@inproceedings{84ce9532e3a847cbbaf6ec0258a25dba,
title = "High total dose gamma radiation assessment of commercially available SiGe Heterojunction Bipolar Transistors",
abstract = "Maintenance tasks of the future International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, some of which need to be radiation tolerant up to MGy dose levels. As a key element of opto -electronic transceivers, we therefore assessed the DC behavior of a commercial-off-the-shelf (COTS) SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to 15 MGy, with dose rates from 160 Gy/h to 27 Gy/h. Our in-situ measurements of the forward DC current gain (hfe) present a limited loss of about 30 % for a base current of 100 µA, with a dependence on the biasing conditions and a thermally activated recovery. These first ever reported results up to MGy levels allow us to design circuit-hardened driving electronics for both photonic transmitters and receivers, enabling high bandwith communications applied in a fusion reactor environment.",
keywords = "annealing, dose rate effects, gamma radiation effects, SiGe heterojunction bipolar transistors",
author = "{Van Uffelen}, Marco and Sam Geboers and Paul Leroux and Francis Berghmans",
note = "Score = 3; Photonics for Space Environments X ; Conference date: 25-08-2005 Through 25-08-2005",
year = "2005",
month = aug,
day = "26",
language = "English",
pages = "58970--1",
booktitle = "Proceedings of SPIE",

}

RIS - Download

TY - GEN

T1 - High total dose gamma radiation assessment of commercially available SiGe Heterojunction Bipolar Transistors

AU - Van Uffelen, Marco

AU - Geboers, Sam

AU - Leroux, Paul

AU - Berghmans, Francis

N1 - Score = 3

PY - 2005/8/26

Y1 - 2005/8/26

N2 - Maintenance tasks of the future International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, some of which need to be radiation tolerant up to MGy dose levels. As a key element of opto -electronic transceivers, we therefore assessed the DC behavior of a commercial-off-the-shelf (COTS) SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to 15 MGy, with dose rates from 160 Gy/h to 27 Gy/h. Our in-situ measurements of the forward DC current gain (hfe) present a limited loss of about 30 % for a base current of 100 µA, with a dependence on the biasing conditions and a thermally activated recovery. These first ever reported results up to MGy levels allow us to design circuit-hardened driving electronics for both photonic transmitters and receivers, enabling high bandwith communications applied in a fusion reactor environment.

AB - Maintenance tasks of the future International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, some of which need to be radiation tolerant up to MGy dose levels. As a key element of opto -electronic transceivers, we therefore assessed the DC behavior of a commercial-off-the-shelf (COTS) SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to 15 MGy, with dose rates from 160 Gy/h to 27 Gy/h. Our in-situ measurements of the forward DC current gain (hfe) present a limited loss of about 30 % for a base current of 100 µA, with a dependence on the biasing conditions and a thermally activated recovery. These first ever reported results up to MGy levels allow us to design circuit-hardened driving electronics for both photonic transmitters and receivers, enabling high bandwith communications applied in a fusion reactor environment.

KW - annealing

KW - dose rate effects

KW - gamma radiation effects

KW - SiGe heterojunction bipolar transistors

UR - http://knowledgecentre.sckcen.be/so2/bibref/2754

M3 - In-proceedings paper

SP - 58970

EP - 58971

BT - Proceedings of SPIE

CY - Bellingham, United States

T2 - Photonics for Space Environments X

Y2 - 25 August 2005 through 25 August 2005

ER -

ID: 84205