In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

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Abstract

The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

Details

Original languageEnglish
Title of host publicationSafe 2007
Place of PublicationUtrecht, Netherlands
Publication statusPublished - Nov 2007
EventSafe 2007 - STW, Veldhoven, Netherlands
Duration: 29 Nov 200729 Nov 2007

Conference

ConferenceSafe 2007
CountryNetherlands
CityVeldhoven
Period2007-11-292007-11-29

Keywords

  • SiGe Heterojunction Bipolar Transistor, Gamma radiation, online measurements, base current recovery

ID: 280884