In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels
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Abstract
The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.
Details
| Original language | English |
|---|---|
| Title of host publication | Safe 2007 |
| Place of Publication | Utrecht, Netherlands |
| Publication status | Published - Nov 2007 |
| Event | Safe 2007 - STW, Veldhoven, Netherlands Duration: 29 Nov 2007 → 29 Nov 2007 |
Conference
| Conference | Safe 2007 |
|---|---|
| Country | Netherlands |
| City | Veldhoven |
| Period | 2007-11-29 → 2007-11-29 |
Keywords
- SiGe Heterojunction Bipolar Transistor, Gamma radiation, online measurements, base current recovery
ID: 280884