In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

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In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels. / Put, Sofie; Simoen, Eddy; Vanhuylenbroeck, Stefaan; Claeys, Cor; Van Uffelen, Marco; Leroux, Paul; Berghmans, Francis.

Safe 2007. Utrecht, Netherlands, 2007.

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review

Harvard

Put, S, Simoen, E, Vanhuylenbroeck, S, Claeys, C, Van Uffelen, M, Leroux, P & Berghmans, F 2007, In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels. in Safe 2007. Utrecht, Netherlands, Safe 2007, Veldhoven, Netherlands, 2007-11-29.

Vancouver

Put S, Simoen E, Vanhuylenbroeck S, Claeys C, Van Uffelen M, Leroux P et al. In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels. In Safe 2007. Utrecht, Netherlands. 2007

Author

Put, Sofie ; Simoen, Eddy ; Vanhuylenbroeck, Stefaan ; Claeys, Cor ; Van Uffelen, Marco ; Leroux, Paul ; Berghmans, Francis. / In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels. Safe 2007. Utrecht, Netherlands, 2007.

Bibtex - Download

@inproceedings{867bec1c02704bdb987fe0d4679a4b34,
title = "In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels",
abstract = "The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.",
keywords = "SiGe Heterojunction Bipolar Transistor, Gamma radiation, online measurements, base current recovery",
author = "Sofie Put and Eddy Simoen and Stefaan Vanhuylenbroeck and Cor Claeys and {Van Uffelen}, Marco and Paul Leroux and Francis Berghmans",
note = "Score = 1; Safe 2007 ; Conference date: 29-11-2007 Through 29-11-2007",
year = "2007",
month = nov,
language = "English",
booktitle = "Safe 2007",

}

RIS - Download

TY - GEN

T1 - In-situ recovery of the base current of SiGe NPN HBTs at high gamma dose levels

AU - Put, Sofie

AU - Simoen, Eddy

AU - Vanhuylenbroeck, Stefaan

AU - Claeys, Cor

AU - Van Uffelen, Marco

AU - Leroux, Paul

AU - Berghmans, Francis

N1 - Score = 1

PY - 2007/11

Y1 - 2007/11

N2 - The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

AB - The base current Ib of a 0.13 μm SiGe HBT (Heterojunction Bipolar Transistor) is measured during gamma irradiation. Three different regions are observed: an initial degradation region (0-20 kGy) in which Ib decreases, a saturation region (20-60 kGy), showing a saturation of Ib, and a recovery region (60-100 kGy) where the excess Ib starts to decrease. This technology is compared with two older technologies: a 0.35 μm SiGe HBT from AMS and a discrete transistor from Infineon. Both technologies show, after an initial increase in Ib a slight decrease of Ib. It is observed that the end of the initial degradation shifts to a lower dose as technology scales down.

KW - SiGe Heterojunction Bipolar Transistor

KW - Gamma radiation

KW - online measurements

KW - base current recovery

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97113

UR - http://knowledgecentre.sckcen.be/so2/bibref/5780

M3 - In-proceedings paper

BT - Safe 2007

CY - Utrecht, Netherlands

T2 - Safe 2007

Y2 - 29 November 2007 through 29 November 2007

ER -

ID: 280884