In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review

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In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction. / Leenaers, Ann; Van den Berghe, Sven; Knaepen, Werner; Detavernier, Christophe.

International Meeting on Reduced Enrichment for Research and Test Reactors. Argonne, IL, United States, 2010.

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review

Harvard

Leenaers, A, Van den Berghe, S, Knaepen, W & Detavernier, C 2010, In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction. in International Meeting on Reduced Enrichment for Research and Test Reactors. Argonne, IL, United States, International Meeting on Reduced Enrichment for Research and Test Reactors, Lisbon, Portugal, 2010-10-10.

APA

Leenaers, A., Van den Berghe, S., Knaepen, W., & Detavernier, C. (2010). In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction. In International Meeting on Reduced Enrichment for Research and Test Reactors

Vancouver

Leenaers A, Van den Berghe S, Knaepen W, Detavernier C. In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction. In International Meeting on Reduced Enrichment for Research and Test Reactors. Argonne, IL, United States. 2010

Author

Leenaers, Ann ; Van den Berghe, Sven ; Knaepen, Werner ; Detavernier, Christophe. / In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction. International Meeting on Reduced Enrichment for Research and Test Reactors. Argonne, IL, United States, 2010.

Bibtex - Download

@inproceedings{fa97e7cdaef84947bbd8ea299fd97712,
title = "In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction",
abstract = "The solid state reaction between U(Mo) and Si, leading to the formation of silicides, has been studied using in situ X-ray Diffraction. Samples were prepared by sputter depositing Si in thin layers on U(Mo) substrates and vice versa. Several samples were heated to temperatures up to 950 ºC in a purified helium atmosphere. Even though the measurements were hampered by the undesired oxidation of uranium, the formation of various silicides could be observed. Kissinger analysis on ramp anneals with ramp rates of 0.2, 0.5, 1 and 3 ºC/s have been performed to investigate the kinetics of the formed silicides. Using this method, the apparent activation energy for the different silicide formation reactions was deduced.",
keywords = "solid state reaction, Kissinger analysis, uranium silicide formation",
author = "Ann Leenaers and {Van den Berghe}, Sven and Werner Knaepen and Christophe Detavernier",
year = "2010",
month = oct,
language = "English",
booktitle = "International Meeting on Reduced Enrichment for Research and Test Reactors",
note = "International Meeting on Reduced Enrichment for Research and Test Reactors ; Conference date: 10-10-2010 Through 14-10-2010",

}

RIS - Download

TY - GEN

T1 - In-Situ X-ray Diffraction Study of the U(Mo)/Si Solid State Reaction

AU - Leenaers, Ann

AU - Van den Berghe, Sven

AU - Knaepen, Werner

AU - Detavernier, Christophe

PY - 2010/10

Y1 - 2010/10

N2 - The solid state reaction between U(Mo) and Si, leading to the formation of silicides, has been studied using in situ X-ray Diffraction. Samples were prepared by sputter depositing Si in thin layers on U(Mo) substrates and vice versa. Several samples were heated to temperatures up to 950 ºC in a purified helium atmosphere. Even though the measurements were hampered by the undesired oxidation of uranium, the formation of various silicides could be observed. Kissinger analysis on ramp anneals with ramp rates of 0.2, 0.5, 1 and 3 ºC/s have been performed to investigate the kinetics of the formed silicides. Using this method, the apparent activation energy for the different silicide formation reactions was deduced.

AB - The solid state reaction between U(Mo) and Si, leading to the formation of silicides, has been studied using in situ X-ray Diffraction. Samples were prepared by sputter depositing Si in thin layers on U(Mo) substrates and vice versa. Several samples were heated to temperatures up to 950 ºC in a purified helium atmosphere. Even though the measurements were hampered by the undesired oxidation of uranium, the formation of various silicides could be observed. Kissinger analysis on ramp anneals with ramp rates of 0.2, 0.5, 1 and 3 ºC/s have been performed to investigate the kinetics of the formed silicides. Using this method, the apparent activation energy for the different silicide formation reactions was deduced.

KW - solid state reaction

KW - Kissinger analysis

KW - uranium silicide formation

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_108512

UR - http://knowledgecentre.sckcen.be/so2/bibref/7250

M3 - In-proceedings paper

BT - International Meeting on Reduced Enrichment for Research and Test Reactors

CY - Argonne, IL, United States

T2 - International Meeting on Reduced Enrichment for Research and Test Reactors

Y2 - 10 October 2010 through 14 October 2010

ER -

ID: 67975