Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs

Research output: Contribution to journalArticle

Authors

  • Alessio Griffoni
  • Simone Gerardin
  • Gaudenzio Meneghesso
  • Alessandro Paccagnella
  • Eddy Simoen
  • Sofie Put
  • Cor Claeys

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Abstract

We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices.We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple- Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.

Details

Original languageEnglish
Pages (from-to)3182-3188
JournalIEEE transactions on nuclear Science
Volume55
Issue number6
DOIs
Publication statusPublished - Jul 2008
EventNSREC 2008 - Tucson, Arizona, United States
Duration: 14 Jul 200814 Jul 2008

Keywords

  • Breakdown, heavy ions, microdose, multigate device

ID: 67437