Abstract
We studied the permanent effects of heavy-ion strikes
on decananometer triple-gate SOI devices.We highlighted the role
of the geometry and the three-dimensional architecture in the response
to heavy ions. Heavy-ion strikes in state-of-the-art Triple-
Gate FETs may have measurable permanent effects, due to microdose
in the buried oxide, breakdown of the gate oxide, or interface
state generation in the side oxide/body interface. This last effect is
particularly interesting since it is related to the verticality of multigate
transistors.
Details
Original language | English |
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Pages (from-to) | 3182-3188 |
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Journal | IEEE transactions on nuclear Science |
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Volume | 55 |
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Issue number | 6 |
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DOIs | |
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Publication status | Published - Jul 2008 |
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Event | NSREC 2008 - Tucson, Arizona, United States Duration: 14 Jul 2008 → 14 Jul 2008 |
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