Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs

Research output: Contribution to journalArticle

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Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs. / Griffoni, Alessio; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Simoen, Eddy; Put, Sofie; Claeys, Cor; Schyns, Marc (Peer reviewer).

In: IEEE transactions on nuclear Science, Vol. 55, No. 6, 07.2008, p. 3182-3188.

Research output: Contribution to journalArticle

Harvard

Griffoni, A, Gerardin, S, Meneghesso, G, Paccagnella, A, Simoen, E, Put, S, Claeys, C & Schyns, M 2008, 'Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs', IEEE transactions on nuclear Science, vol. 55, no. 6, pp. 3182-3188. https://doi.org/10.1109/TNS.2008.2007234

APA

Griffoni, A., Gerardin, S., Meneghesso, G., Paccagnella, A., Simoen, E., Put, S., ... Schyns, M. (2008). Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs. IEEE transactions on nuclear Science, 55(6), 3182-3188. https://doi.org/10.1109/TNS.2008.2007234

Vancouver

Griffoni A, Gerardin S, Meneghesso G, Paccagnella A, Simoen E, Put S et al. Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs. IEEE transactions on nuclear Science. 2008 Jul;55(6):3182-3188. https://doi.org/10.1109/TNS.2008.2007234

Author

Griffoni, Alessio ; Gerardin, Simone ; Meneghesso, Gaudenzio ; Paccagnella, Alessandro ; Simoen, Eddy ; Put, Sofie ; Claeys, Cor ; Schyns, Marc. / Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs. In: IEEE transactions on nuclear Science. 2008 ; Vol. 55, No. 6. pp. 3182-3188.

Bibtex - Download

@article{c228b2532c8a4639887013664ca2f2f6,
title = "Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs",
abstract = "We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices.We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple- Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.",
keywords = "Breakdown, heavy ions, microdose, multigate device",
author = "Alessio Griffoni and Simone Gerardin and Gaudenzio Meneghesso and Alessandro Paccagnella and Eddy Simoen and Sofie Put and Cor Claeys and Marc Schyns",
note = "Score = 10",
year = "2008",
month = "7",
doi = "10.1109/TNS.2008.2007234",
language = "English",
volume = "55",
pages = "3182--3188",
journal = "IEEE transactions on nuclear Science",
issn = "0018-9499",
publisher = "IEEE - Institute of Electrical and Electronics Engineers",
number = "6",

}

RIS - Download

TY - JOUR

T1 - Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs

AU - Griffoni, Alessio

AU - Gerardin, Simone

AU - Meneghesso, Gaudenzio

AU - Paccagnella, Alessandro

AU - Simoen, Eddy

AU - Put, Sofie

AU - Claeys, Cor

A2 - Schyns, Marc

N1 - Score = 10

PY - 2008/7

Y1 - 2008/7

N2 - We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices.We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple- Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.

AB - We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices.We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple- Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.

KW - Breakdown

KW - heavy ions

KW - microdose

KW - multigate device

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_97139

UR - http://knowledgecentre.sckcen.be/so2/bibref/5788

U2 - 10.1109/TNS.2008.2007234

DO - 10.1109/TNS.2008.2007234

M3 - Article

VL - 55

SP - 3182

EP - 3188

JO - IEEE transactions on nuclear Science

JF - IEEE transactions on nuclear Science

SN - 0018-9499

IS - 6

ER -

ID: 67437