Modelling of Gamma-Radiation Effects in Bipolar Transistors with VHDL-AMS

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Abstract

This paper presents an application of the VHDL-AMS modelling language to the characterisation of gamma-radiation effects on bipolar transistors is presented. The model is based on the Gummel-Poon bipolar transistor model and takes the radiation induced effects into account on parameter level. It is shown that the gamma-radiation induced effects on the transistor's performance can be modelled by implementing a specific set of model parameters as dose dependent functions. Two different devices were modelled with this approach, a COTS matched pair bipolar transistor and a commercially available 0.35um SiGe BiCMOS process. It is shown that both devices can be modelled within reasonable accuracy with the proposed VHDL-AMS radiation aware bipolar transistor model.

Details

Original languageEnglish
Title of host publicationEuropean Conference on Radiation and Its Effects on Components and Systems (RADECS), 2009
Place of PublicationPiscataway, NJ, United States
Pages61-64
Publication statusPublished - 14 Sep 2009
EventRADEC 2009 : 10th European Conference on Radiation Effects on Components and Systems - RADEC association - Radiation Effects on Components and Systems, Brugge, Belgium
Duration: 14 Sep 200918 Sep 2009

Conference

ConferenceRADEC 2009 : 10th European Conference on Radiation Effects on Components and Systems
CountryBelgium
CityBrugge
Period2009-09-142009-09-18

Keywords

  • Gamma-Radiation, VHDL-AMS, Bipolar transistor, SiGe, BiCMOS, TID

ID: 129394