Nuclear radiation detector based on ion implanted p-n Junction in 4H-SiC

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Authors

  • Vanessa Vervisch
  • Fatima Issa
  • Laurent Ottaviani
  • Dora Szalkai
  • Ludo Vermeeren
  • Axel Klix
  • Anders Hallen
  • Andrej Kuznetsov
  • Mihai Lazar
  • Abdallah Lyoussi

Documents & links

Abstract

In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed by in the Belgian Reactor BR1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor powers.

Details

Original languageEnglish
Title of host publicationIEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6728002
Place of PublicationUnited States
Pages1-5
Publication statusPublished - Dec 2013
Event2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille, France
Duration: 23 Jun 201328 Jun 2013

Conference

Conference2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
CountryFrance
CityMarseille
Period2013-06-232013-06-28

Keywords

  • 4H-SiC, electrical characterizations, ion implantation, neutron irradiation, pn junction

ID: 155663