Nuclear Radiation Detectors based on 4H-SiC p+-n Junction

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Authors

  • Fatima Issa
  • Vanessa Vervisch
  • Laurent Ottaviani
  • Dora Szalkai
  • Ludo Vermeeren
  • Abdallah Lyoussi
  • Andrej Kuznetsov
  • Mihai Lazar
  • Axel Klix
  • Olivier Palais
  • Anders Hallen

Documents & links

Abstract

Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

Details

Original languageEnglish
Title of host publicationMaterials Science Forum Vols. 778-780, doi:10.4028/www.scientific.net/MSF.778-780.1046
Place of PublicationZürich, Switzerland
Pages1046-1049
Publication statusPublished - Feb 2014
EventInternational Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013) - JAEA, AIST, CRIEPI, Miyazaki, Japan
Duration: 29 Sep 20134 Oct 2013

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials 2013 (ICSCRM2013)
CountryJapan
CityMiyazaki
Period2013-09-292013-10-04

Keywords

  • 4H-SiC, implantation, thermal neutrons, pn diodes, leakage current, space charge region, neutron converter layer

ID: 346834