Proton and gamma radiation of 0.13 μm 200 GHz NPN SiGe:C HBTs featuring an airgap deep trench isolation

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Authors

Institutes & Expert groups

Documents & links

Abstract

The effect of airgap deep trench isolation on the radiation behavior of a 0.13μm NPN SiGe:C HBT is studied and compared with standard components with conventional junction isolation. Proton and gamma irradiations are performed. The only effect on this technology after a proton irradiation of 7 kGy is a decrease in collector current at higher base-emitter voltages. After 100 kGy gamma irradiation, no change in collector current is observed. However, the base current increases severely at lower base-emitter voltages. In forward-mode the base current degradation of devices featuring deep trench isolation is higher compared to conventional devices. In reverse-mode the effect is opposite: degradation is higher for conventional devices. The difference in degradation between the two isolation types is smaller in forward-mode operation.

Details

Original languageEnglish
Title of host publicationProceedings of the 9th European Conference on Radiation and its Effects on Components and Systems
Place of PublicationNew York, NY, United States
Pages92-96
Publication statusPublished - 12 Sep 2007
Event9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007) - Deauville, France
Duration: 10 Sep 200714 Sep 2007

Conference

Conference9th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2007)
CountryFrance
CityDeauville
Period2007-09-102007-09-14

Keywords

  • Deep trench isolation, Gamma irradiation Heterojunction Bipolar Transistor, Proton irradiation

ID: 254505