Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs

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Abstract

An overview is given about the total dose radiation response of deep submicrometer CMOS technologies, implementing strain or mobility engineering. It will be shown that while the total dose hardness reaches acceptable levels from a viewpoint of space applications, some new degradation mechanisms have been identified, which will be discussed.

Details

Original languageEnglish
Title of host publicationProc. 8th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
Place of PublicationJapan
Pages67-72
Publication statusPublished - Dec 2008
EventInt. Workshop on Radiation Effects on Semiconductor Devices for Space Applications - Tsukuba, Japan
Duration: 15 Dec 200815 Dec 2008

Conference

ConferenceInt. Workshop on Radiation Effects on Semiconductor Devices for Space Applications
CountryJapan
CityTsukuba
Period2008-12-152008-12-15

Keywords

  • High mobility, Deep submicron Devices, Radiation Hardness

ID: 274712