Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs
Research output: Contribution to report/book/conference proceedings › In-proceedings paper
Institutes & Expert groups
Documents & links
Abstract
An overview is given about the total dose radiation response of deep submicrometer CMOS technologies, implementing strain or mobility engineering. It will be shown that while the total dose hardness reaches acceptable levels from a viewpoint of space applications, some new degradation mechanisms have been identified, which will be discussed.
Details
| Original language | English |
|---|---|
| Title of host publication | Proc. 8th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications |
| Place of Publication | Japan |
| Pages | 67-72 |
| Publication status | Published - Dec 2008 |
| Event | Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications - Tsukuba, Japan Duration: 15 Dec 2008 → 15 Dec 2008 |
Conference
| Conference | Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications |
|---|---|
| Country | Japan |
| City | Tsukuba |
| Period | 2008-12-15 → 2008-12-15 |
Keywords
- High mobility, Deep submicron Devices, Radiation Hardness
ID: 274712