Radiation Silicon Carbide Detectors Based on Ion

Research output: Contribution to journalArticle

Authors

  • Fatima Issa
  • Vanessa Vervisch
  • Laurent Ottaviani
  • Dora Szalkai
  • Ludo Vermeeren
  • Abdallah Lyoussi
  • Andrej Kuznetsov
  • Mihai Lazar
  • Axel Klix
  • Olivier Palais
  • Anders Hallen

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Abstract

Radiation detectors based on radiation-hardened semiconductor such as silicon carbide, have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ layer, and then implanted by boron ( 10B) to realize the NCL. The second type was based on p+ epitaxial layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.

Details

Original languageEnglish
Pages (from-to)2105-2111
JournalIEEE transactions on nuclear Science
Volume61
Issue number4
DOIs
Publication statusPublished - Aug 2014

Keywords

  • Diode, ion implantation, leakage current, pn junction, silicon carbide, space charge region, thermal neutrons

ID: 302726