Radiation Silicon Carbide Detectors Based on Ion

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Radiation Silicon Carbide Detectors Based on Ion. / Issa, Fatima; Vervisch, Vanessa; Ottaviani, Laurent; Szalkai, Dora; Vermeeren, Ludo; Lyoussi, Abdallah; Kuznetsov, Andrej; Lazar, Mihai; Klix, Axel; Palais, Olivier; Hallen, Anders; Leysen, Willem (Peer reviewer).

In: IEEE transactions on nuclear Science, Vol. 61, No. 4, 08.2014, p. 2105-2111.

Research output: Contribution to journalArticle

Harvard

Issa, F, Vervisch, V, Ottaviani, L, Szalkai, D, Vermeeren, L, Lyoussi, A, Kuznetsov, A, Lazar, M, Klix, A, Palais, O, Hallen, A & Leysen, W 2014, 'Radiation Silicon Carbide Detectors Based on Ion', IEEE transactions on nuclear Science, vol. 61, no. 4, pp. 2105-2111. https://doi.org/10.1109/TNS.2014.2320943

APA

Issa, F., Vervisch, V., Ottaviani, L., Szalkai, D., Vermeeren, L., Lyoussi, A., ... Leysen, W. (2014). Radiation Silicon Carbide Detectors Based on Ion. IEEE transactions on nuclear Science, 61(4), 2105-2111. https://doi.org/10.1109/TNS.2014.2320943

Vancouver

Issa F, Vervisch V, Ottaviani L, Szalkai D, Vermeeren L, Lyoussi A et al. Radiation Silicon Carbide Detectors Based on Ion. IEEE transactions on nuclear Science. 2014 Aug;61(4):2105-2111. https://doi.org/10.1109/TNS.2014.2320943

Author

Issa, Fatima ; Vervisch, Vanessa ; Ottaviani, Laurent ; Szalkai, Dora ; Vermeeren, Ludo ; Lyoussi, Abdallah ; Kuznetsov, Andrej ; Lazar, Mihai ; Klix, Axel ; Palais, Olivier ; Hallen, Anders ; Leysen, Willem. / Radiation Silicon Carbide Detectors Based on Ion. In: IEEE transactions on nuclear Science. 2014 ; Vol. 61, No. 4. pp. 2105-2111.

Bibtex - Download

@article{1c1f55b0a7944b49bea562de8d192cd3,
title = "Radiation Silicon Carbide Detectors Based on Ion",
abstract = "Radiation detectors based on radiation-hardened semiconductor such as silicon carbide, have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ layer, and then implanted by boron ( 10B) to realize the NCL. The second type was based on p+ epitaxial layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.",
keywords = "Diode, ion implantation, leakage current, pn junction, silicon carbide, space charge region, thermal neutrons",
author = "Fatima Issa and Vanessa Vervisch and Laurent Ottaviani and Dora Szalkai and Ludo Vermeeren and Abdallah Lyoussi and Andrej Kuznetsov and Mihai Lazar and Axel Klix and Olivier Palais and Anders Hallen and Willem Leysen",
note = "Score = 10",
year = "2014",
month = "8",
doi = "10.1109/TNS.2014.2320943",
language = "English",
volume = "61",
pages = "2105--2111",
journal = "IEEE transactions on nuclear Science",
issn = "0018-9499",
publisher = "IEEE - Institute of Electrical and Electronics Engineers",
number = "4",

}

RIS - Download

TY - JOUR

T1 - Radiation Silicon Carbide Detectors Based on Ion

AU - Issa, Fatima

AU - Vervisch, Vanessa

AU - Ottaviani, Laurent

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Lyoussi, Abdallah

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Klix, Axel

AU - Palais, Olivier

AU - Hallen, Anders

A2 - Leysen, Willem

N1 - Score = 10

PY - 2014/8

Y1 - 2014/8

N2 - Radiation detectors based on radiation-hardened semiconductor such as silicon carbide, have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ layer, and then implanted by boron ( 10B) to realize the NCL. The second type was based on p+ epitaxial layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.

AB - Radiation detectors based on radiation-hardened semiconductor such as silicon carbide, have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p+ layer, and then implanted by boron ( 10B) to realize the NCL. The second type was based on p+ epitaxial layer, and was implanted by 10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding.

KW - Diode

KW - ion implantation

KW - leakage current

KW - pn junction

KW - silicon carbide

KW - space charge region

KW - thermal neutrons

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_137014

UR - http://knowledgecentre.sckcen.be/so2/bibref/11843

U2 - 10.1109/TNS.2014.2320943

DO - 10.1109/TNS.2014.2320943

M3 - Article

VL - 61

SP - 2105

EP - 2111

JO - IEEE transactions on nuclear Science

JF - IEEE transactions on nuclear Science

SN - 0018-9499

IS - 4

ER -

ID: 302726