Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Authors

  • Fatima Issa
  • Laurent Ottaviani
  • Vanessa Vervisch
  • Dora Szalkai
  • Ludo Vermeeren
  • Abdallah Lyoussi
  • Andrej Kuznetsov
  • Mihai Lazar
  • Axel Klix
  • Olivier Palais
  • Anders Hallen

Documents & links

Abstract

Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

Details

Original languageEnglish
Title of host publicationIEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997
Place of PublicationUnited States
Pages1-5
Publication statusPublished - Dec 2013
Event2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications: International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications - CEA, Aix-Marseille University, SCK•CEN, IEEE, Marseille, France
Duration: 23 Jun 201328 Jun 2013

Conference

Conference2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications
CountryFrance
CityMarseille
Period2013-06-232013-06-28

Keywords

  • diode, pn junction, silicon carbide, space charge region, thermal neutrons

ID: 78219