Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

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Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. / Issa, Fatima; Ottaviani, Laurent; Vervisch, Vanessa; Szalkai, Dora; Vermeeren, Ludo; Lyoussi, Abdallah; Kuznetsov, Andrej; Lazar, Mihai; Klix, Axel; Palais, Olivier; Hallen, Anders; Schyns, Marc (Peer reviewer).

IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States, 2013. p. 1-5.

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Harvard

Issa, F, Ottaviani, L, Vervisch, V, Szalkai, D, Vermeeren, L, Lyoussi, A, Kuznetsov, A, Lazar, M, Klix, A, Palais, O, Hallen, A & Schyns, M 2013, Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. in IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States, pp. 1-5, 2013 - ANIMMA - Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Marseille, France, 2013-06-23.

APA

Issa, F., Ottaviani, L., Vervisch, V., Szalkai, D., Vermeeren, L., Lyoussi, A., ... Schyns, M. (2013). Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. In IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997 (pp. 1-5). United States.

Vancouver

Issa F, Ottaviani L, Vervisch V, Szalkai D, Vermeeren L, Lyoussi A et al. Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. In IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States. 2013. p. 1-5

Author

Issa, Fatima ; Ottaviani, Laurent ; Vervisch, Vanessa ; Szalkai, Dora ; Vermeeren, Ludo ; Lyoussi, Abdallah ; Kuznetsov, Andrej ; Lazar, Mihai ; Klix, Axel ; Palais, Olivier ; Hallen, Anders ; Schyns, Marc. / Radiation Silicon Carbide Detectors based on Ion Implantation of Boron. IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997. United States, 2013. pp. 1-5

Bibtex - Download

@inproceedings{0434a78ed36648a8b3879b0b7f2cd83c,
title = "Radiation Silicon Carbide Detectors based on Ion Implantation of Boron",
abstract = "Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.",
keywords = "diode, pn junction, silicon carbide, space charge region, thermal neutrons",
author = "Fatima Issa and Laurent Ottaviani and Vanessa Vervisch and Dora Szalkai and Ludo Vermeeren and Abdallah Lyoussi and Andrej Kuznetsov and Mihai Lazar and Axel Klix and Olivier Palais and Anders Hallen and Marc Schyns",
note = "Score = 3",
year = "2013",
month = "12",
language = "English",
isbn = "978-1-4799-1047-2",
pages = "1--5",
booktitle = "IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997",

}

RIS - Download

TY - GEN

T1 - Radiation Silicon Carbide Detectors based on Ion Implantation of Boron

AU - Issa, Fatima

AU - Ottaviani, Laurent

AU - Vervisch, Vanessa

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Lyoussi, Abdallah

AU - Kuznetsov, Andrej

AU - Lazar, Mihai

AU - Klix, Axel

AU - Palais, Olivier

AU - Hallen, Anders

A2 - Schyns, Marc

N1 - Score = 3

PY - 2013/12

Y1 - 2013/12

N2 - Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

AB - Radiation detectors based on radiation-hard semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments and nuclear power reactor. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

KW - diode

KW - pn junction

KW - silicon carbide

KW - space charge region

KW - thermal neutrons

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_134254

UR - http://knowledgecentre.sckcen.be/so2/bibref/11258

M3 - In-proceedings paper

SN - 978-1-4799-1047-2

SP - 1

EP - 5

BT - IEEE Conference Publications, doi: 10.1109/ANIMMA.2013.6727997

CY - United States

ER -

ID: 78219