SPICE Modelling of a Discrete COTS SiGe HBT for Digital Applications up to MGy Dose Levels

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Abstract

Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (β) presents a limited loss of about 3 0% for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

Details

Original languageEnglish
Pages (from-to)1945-1949
JournalIEEE transactions on nuclear Science
Volume53
Issue number4
DOIs
Publication statusPublished - Aug 2006
EventRadiation and its Effects on Components and Systems (RADECS) - IEEE, Cap d'Agde, France
Duration: 19 Sep 200523 Sep 2005

Keywords

  • DC current gain, ionizing radiation, SiGe HBT, SPICE model

ID: 329819