SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels

Research output: Contribution to report/book/conference proceedings › In-proceedings paper › peer-review

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SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. / Van Uffelen, Marco; Geboers, Sam; Leroux, Paul; Berghmans, Francis; Goussarov, Andrei (Peer reviewer).

Conférence RADECS 2005 Proceedings. France, 2007. p. 1-5.

Research output: Contribution to report/book/conference proceedings › In-proceedings paper › peer-review

Harvard

Van Uffelen, M, Geboers, S, Leroux, P, Berghmans, F & Goussarov, A 2007, SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. in Conférence RADECS 2005 Proceedings. France, pp. 1-5, RADECS, Cap d'Agde, France, 2005-09-19.

APA

Van Uffelen, M., Geboers, S., Leroux, P., Berghmans, F., & Goussarov, A. (2007). SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. In Conférence RADECS 2005 Proceedings (pp. 1-5).

Vancouver

Van Uffelen M, Geboers S, Leroux P, Berghmans F, Goussarov A. SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. In Conférence RADECS 2005 Proceedings. France. 2007. p. 1-5

Author

Van Uffelen, Marco ; Geboers, Sam ; Leroux, Paul ; Berghmans, Francis ; Goussarov, Andrei. / SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels. Conférence RADECS 2005 Proceedings. France, 2007. pp. 1-5

Bibtex - Download

@inproceedings{634ad9e54ba6421a88c7c23af64be190,
title = "SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels",
abstract = "Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (B) presents a limited loss of about 30 % for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.",
keywords = "DC current gain, ionizing radiation, SiGe HBT, SPICE model",
author = "{Van Uffelen}, Marco and Sam Geboers and Paul Leroux and Francis Berghmans and Andrei Goussarov",
note = "Score = 1; RADECS ; Conference date: 19-09-2005 Through 23-09-2005",
year = "2007",
month = sep,
language = "English",
pages = "1--5",
booktitle = "Conf{\'e}rence RADECS 2005 Proceedings",

}

RIS - Download

TY - GEN

T1 - SPICE modelling of a discrete COTS SiGe HBT for digital applications up to MGy dose levels

AU - Van Uffelen, Marco

AU - Geboers, Sam

AU - Leroux, Paul

AU - Berghmans, Francis

A2 - Goussarov, Andrei

N1 - Score = 1

PY - 2007/9

Y1 - 2007/9

N2 - Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (B) presents a limited loss of about 30 % for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

AB - Future maintenance tasks of the International Experimental Thermonuclear fusion Reactor (ITER) will require communication links between the remotely operated equipment in the reactor vessel and the control room, that are radiation tolerant up to MGy dose levels. We therefore assessed the DC behaviour of a COTS SiGe heterojunction bipolar transistor (HBT) under gamma radiation up to more than 4 MGy. The DC current gain (B) presents a limited loss of about 30 % for a base current of 100 µA. Our in-situ measurements allowed us to adapt the manufacturer's SPICE model and account for these radiation effects. Circuit-hardened driving electronics for both photonic transmitters and receivers can hence be designed.

KW - DC current gain

KW - ionizing radiation

KW - SiGe HBT

KW - SPICE model

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_83363

UR - http://knowledgecentre.sckcen.be/so2/bibref/4479

M3 - In-proceedings paper

SP - 1

EP - 5

BT - Conférence RADECS 2005 Proceedings

CY - France

T2 - RADECS

Y2 - 19 September 2005 through 23 September 2005

ER -

ID: 356798