Stacking fault energy in silicon

Research output: Report/bookBLG - Open reportpeer-review

Authors

  • Eddy Aerts
  • Pierre Delavignette
  • R. Siems
  • Severin Amelinckx
  • Union Minière
  • SCK CEN

Documents & links

Abstract

In hexagonal networks in the (111) plane of silicon both families of nodes are "extended". This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.Bot the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

Details

Original languageEnglish
PublisherSCK CEN
Number of pages6
Publication statusPublished - May 1962

Publication series

NameSCK CEN Reports
PublisherSCK CEN
No.BLG-152

ID: 7881876