Study of the stability of 4H-SiC detectors by thermal neutron irradiation

Research output: Contribution to report/book/conference proceedingsIn-proceedings paperpeer-review


  • Fatima Issa
  • Laurent Ottaviani
  • Vanessa Vervisch
  • Dora Szalkai
  • Ludo Vermeeren
  • Abdallah Lyoussi
  • Andrei Kuznetsov
  • Mihai Lazar
  • Axel Klix
  • Olivier Palais
  • raffaello Ferone
  • Anders Hallen

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Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection.


Original languageEnglish
Title of host publicationMaterial Science Forum
Place of PublicationPfaffikon, Switzerland
Publication statusPublished - Apr 2015
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM) - Grenoble INP, Grenoble, France
Duration: 21 Sep 201425 Sep 2014


ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM)


  • 4H-SiC, implantation, thermal neutrons, pn diodes, neutron converter layer.

ID: 102135