Study of the stability of 4H-SiC detectors by thermal neutron irradiation

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

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Study of the stability of 4H-SiC detectors by thermal neutron irradiation. / Issa, Fatima; Ottaviani, Laurent; Vervisch, Vanessa; Szalkai, Dora; Vermeeren, Ludo; Lyoussi, Abdallah; Kuznetsov, Andrei; Lazar, Mihai; Klix, Axel; Palais, Olivier; Ferone, raffaello; Hallen, Anders; Schyns, Marc (Peer reviewer).

Material Science Forum. Vol. 821 Pfaffikon, Switzerland, 2015. p. 875-878.

Research output: Contribution to report/book/conference proceedingsIn-proceedings paper

Harvard

Issa, F, Ottaviani, L, Vervisch, V, Szalkai, D, Vermeeren, L, Lyoussi, A, Kuznetsov, A, Lazar, M, Klix, A, Palais, O, Ferone, R, Hallen, A & Schyns, M 2015, Study of the stability of 4H-SiC detectors by thermal neutron irradiation. in Material Science Forum. vol. 821, Pfaffikon, Switzerland, pp. 875-878, European Conference on Silicon Carbide and Related Materials (ECSCRM), Grenoble, France, 2014-09-21.

APA

Issa, F., Ottaviani, L., Vervisch, V., Szalkai, D., Vermeeren, L., Lyoussi, A., ... Schyns, M. (2015). Study of the stability of 4H-SiC detectors by thermal neutron irradiation. In Material Science Forum (Vol. 821, pp. 875-878). Pfaffikon, Switzerland.

Vancouver

Issa F, Ottaviani L, Vervisch V, Szalkai D, Vermeeren L, Lyoussi A et al. Study of the stability of 4H-SiC detectors by thermal neutron irradiation. In Material Science Forum. Vol. 821. Pfaffikon, Switzerland. 2015. p. 875-878

Author

Issa, Fatima ; Ottaviani, Laurent ; Vervisch, Vanessa ; Szalkai, Dora ; Vermeeren, Ludo ; Lyoussi, Abdallah ; Kuznetsov, Andrei ; Lazar, Mihai ; Klix, Axel ; Palais, Olivier ; Ferone, raffaello ; Hallen, Anders ; Schyns, Marc. / Study of the stability of 4H-SiC detectors by thermal neutron irradiation. Material Science Forum. Vol. 821 Pfaffikon, Switzerland, 2015. pp. 875-878

Bibtex - Download

@inproceedings{7d1e82a958ad4f1cb47cb78865be049f,
title = "Study of the stability of 4H-SiC detectors by thermal neutron irradiation",
abstract = "Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection.",
keywords = "4H-SiC, implantation, thermal neutrons, pn diodes, neutron converter layer.",
author = "Fatima Issa and Laurent Ottaviani and Vanessa Vervisch and Dora Szalkai and Ludo Vermeeren and Abdallah Lyoussi and Andrei Kuznetsov and Mihai Lazar and Axel Klix and Olivier Palais and raffaello Ferone and Anders Hallen and Marc Schyns",
note = "Score = 3",
year = "2015",
month = "4",
language = "English",
volume = "821",
pages = "875--878",
booktitle = "Material Science Forum",

}

RIS - Download

TY - GEN

T1 - Study of the stability of 4H-SiC detectors by thermal neutron irradiation

AU - Issa, Fatima

AU - Ottaviani, Laurent

AU - Vervisch, Vanessa

AU - Szalkai, Dora

AU - Vermeeren, Ludo

AU - Lyoussi, Abdallah

AU - Kuznetsov, Andrei

AU - Lazar, Mihai

AU - Klix, Axel

AU - Palais, Olivier

AU - Ferone, raffaello

AU - Hallen, Anders

A2 - Schyns, Marc

N1 - Score = 3

PY - 2015/4

Y1 - 2015/4

N2 - Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection.

AB - Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation. Some of future using and interesting applications of such SiC detector devices -for non-charged particles (photons and/or neutrons) are expected in the frame of non-destructive assays, nuclear reactor monitoring, safeguards, oil and gas prospection.

KW - 4H-SiC

KW - implantation

KW - thermal neutrons

KW - pn diodes

KW - neutron converter layer.

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/ezp_139325

UR - http://knowledgecentre.sckcen.be/so2/bibref/12545

M3 - In-proceedings paper

VL - 821

SP - 875

EP - 878

BT - Material Science Forum

CY - Pfaffikon, Switzerland

ER -

ID: 102135