Texture of atomic layer deposited ruthenium

Research output: Contribution to journalArticle

Authors

  • Jan Musschoot
  • Q. Xie
  • D. Deduytsche
  • K. De Keyser
  • D. Longrie
  • J. Haemers
  • Sven Van den Berghe
  • R.L. Van Meirhaeghe
  • J. D'Haen
  • C. Detavernier

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Abstract

Ruthenium films were grown by plasma enhanced atomic layer deposition (ALD) on Si(100) and ALD TiN. X-ray diffraction (XRD) showed that the as-deposited films on Si(100) were polycrystalline, on TiN they were (002) oriented. After annealing at 800 C for 60 s, all Ru films were strongly (002) textured and very smooth. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) demonstrated that the lateral grain size of the annealed films was several 100 nm, which was large compared to the 10 nm thickness of the films. No ruthenium silicide was formed by annealing the ALD Ru films on Si(100). Comparison with sputter deposited films learned that this occurred because the ammonia plasma created a SiOxNy reaction barrier layer prior to film growth.

Details

Original languageEnglish
Pages (from-to)1879-1883
JournalMicroelectronic Engineering
Volume87
Issue number10
DOIs
Publication statusPublished - Jun 2010

Keywords

  • Ruthenium, Atomic layer deposition, Texture, Silicide, Ammonia plasma

ID: 183465