The stacking fault energy in silicon

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  • SCK•CEN - Studiecentrum voor Kernenergie/Centre d’Etude de l’Energie Nucléaire

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Abstract

In hexagonal networks in the (111) plane of silicon both families of nodes are ``extended.'' This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.
Both the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

Details

Original languageEnglish
Pages (from-to)3078-3080
Number of pages2
JournalJournal of Applied Physics
Volume33
Issue number10
DOIs
Publication statusPublished - 1962

Keywords

  • stacking fault energy

ID: 4789158