The stacking fault energy in silicon

Research output: Contribution to journalArticle

Standard

The stacking fault energy in silicon. / Aerts, Eddy; Delavignette, Pierre; Siems, R.; Amelinckx, Severin.

In: Journal of Applied Physics, Vol. 33, No. 10, 1962, p. 3078-3080.

Research output: Contribution to journalArticle

Harvard

Aerts, E, Delavignette, P, Siems, R & Amelinckx, S 1962, 'The stacking fault energy in silicon', Journal of Applied Physics, vol. 33, no. 10, pp. 3078-3080. https://doi.org/10.1063/1.1728570

APA

Aerts, E., Delavignette, P., Siems, R., & Amelinckx, S. (1962). The stacking fault energy in silicon. Journal of Applied Physics, 33(10), 3078-3080. https://doi.org/10.1063/1.1728570

Vancouver

Aerts E, Delavignette P, Siems R, Amelinckx S. The stacking fault energy in silicon. Journal of Applied Physics. 1962;33(10):3078-3080. https://doi.org/10.1063/1.1728570

Author

Aerts, Eddy ; Delavignette, Pierre ; Siems, R. ; Amelinckx, Severin. / The stacking fault energy in silicon. In: Journal of Applied Physics. 1962 ; Vol. 33, No. 10. pp. 3078-3080.

Bibtex - Download

@article{32b8a1c07dd44159a136bb50bf1f8b86,
title = "The stacking fault energy in silicon",
abstract = "In hexagonal networks in the (111) plane of silicon both families of nodes are ``extended.'' This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.Both the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.",
keywords = "stacking fault energy",
author = "Eddy Aerts and Pierre Delavignette and R. Siems and Severin Amelinckx",
year = "1962",
doi = "10.1063/1.1728570",
language = "English",
volume = "33",
pages = "3078--3080",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AIP - American Institute of Physics",
number = "10",

}

RIS - Download

TY - JOUR

T1 - The stacking fault energy in silicon

AU - Aerts, Eddy

AU - Delavignette, Pierre

AU - Siems, R.

AU - Amelinckx, Severin

PY - 1962

Y1 - 1962

N2 - In hexagonal networks in the (111) plane of silicon both families of nodes are ``extended.'' This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.Both the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

AB - In hexagonal networks in the (111) plane of silicon both families of nodes are ``extended.'' This implies that intrinsic as well as extrinsic stacking faults have small energy. The two stacking fault energies are ∼50 ergs/cm2 and ∼60 ergs/cm2. It is not possible at present to decide which energy belongs to which stacking fault.Both the etch pits, and the dislocations on which they are centered, can be revealed in the electron microscope.

KW - stacking fault energy

UR - https://ecm.sckcen.be/OTCS/llisapi.dll?func=ll&objId=32394841&objaction=overview&tab=1

U2 - 10.1063/1.1728570

DO - 10.1063/1.1728570

M3 - Article

VL - 33

SP - 3078

EP - 3080

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

ER -

ID: 4789158