TiO(2)/HfO(2) Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeO(x)N(y) Passivation Layer

Research output: Contribution to journalArticlepeer-review


  • Qi Xie
  • Jan Musschoot
  • Marc Schaekers
  • Matty Caymax
  • Annelies Dellabie
  • Dennis Lin
  • Xin-Ping Qu
  • Yu-Long Jiang
  • Sven Van den Berghe
  • Christophe Detavernier

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Material and electrical properties of TiO(2)/HfO(2) bi-layer gate stacks were investigated for germanium (Ge) based metal-oxide-semiconductor devices. In situ NH(3) plasma treatment was employed to passivate the Ge surface and promising performance including low capacitance-voltage hysteresis and interface trap density was achieved. It shows a superior dielectric breakdown voltage (4.2-3.4 V) for the TiO(2)/HfO(2) bi-layer stacks than HfO(2) single layer stack at a similar capacitance equivalent thickness (CET) of 1.6 nm. A minimum CET of 1.4 nm was obtained for capacitors on both p and n-type Ge (100) with a gate leakage current density <4 x 10(-7) A/cm(2) at V(FB) +/- 1 V.


Original languageEnglish
Pages (from-to)G27-G30
JournalElectrochemical and Solid State Letters
Issue number5
Publication statusPublished - Jun 2011


  • electrical properties, films, substrate, interface

ID: 290988