Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Research output: Contribution to journalArticlepeer-review

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Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling. / Goiffon, Vincent; Rizzolo, Serena; Corbière, Franck; Rolando, Sébastien; Bounasser, Saïd; Sergent, Marius; Chabane, Aziouz; Marcelot, Olivier; Estribeau, Magali; Magnan, Pierre; Paillet, Philippe; Girard, Sylvain; Gaillardin, Marc; Allanche, Timothé; Van Uffelen, Marco; Mont Casellas, Laura; Scott, Robin; De Cock, Wouter.

In: IEEE transactions on nuclear Science, Vol. 65, No. 1, 03.01.2018, p. 101-110.

Research output: Contribution to journalArticlepeer-review

Harvard

Goiffon, V, Rizzolo, S, Corbière, F, Rolando, S, Bounasser, S, Sergent, M, Chabane, A, Marcelot, O, Estribeau, M, Magnan, P, Paillet, P, Girard, S, Gaillardin, M, Allanche, T, Van Uffelen, M, Mont Casellas, L, Scott, R & De Cock, W 2018, 'Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling', IEEE transactions on nuclear Science, vol. 65, no. 1, pp. 101-110. https://doi.org/10.1109/TNS.2017.2765481

APA

Goiffon, V., Rizzolo, S., Corbière, F., Rolando, S., Bounasser, S., Sergent, M., Chabane, A., Marcelot, O., Estribeau, M., Magnan, P., Paillet, P., Girard, S., Gaillardin, M., Allanche, T., Van Uffelen, M., Mont Casellas, L., Scott, R., & De Cock, W. (2018). Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling. IEEE transactions on nuclear Science, 65(1), 101-110. https://doi.org/10.1109/TNS.2017.2765481

Vancouver

Goiffon V, Rizzolo S, Corbière F, Rolando S, Bounasser S, Sergent M et al. Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling. IEEE transactions on nuclear Science. 2018 Jan 3;65(1):101-110. https://doi.org/10.1109/TNS.2017.2765481

Author

Goiffon, Vincent ; Rizzolo, Serena ; Corbière, Franck ; Rolando, Sébastien ; Bounasser, Saïd ; Sergent, Marius ; Chabane, Aziouz ; Marcelot, Olivier ; Estribeau, Magali ; Magnan, Pierre ; Paillet, Philippe ; Girard, Sylvain ; Gaillardin, Marc ; Allanche, Timothé ; Van Uffelen, Marco ; Mont Casellas, Laura ; Scott, Robin ; De Cock, Wouter. / Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling. In: IEEE transactions on nuclear Science. 2018 ; Vol. 65, No. 1. pp. 101-110.

Bibtex - Download

@article{a42b8ac76b7a4314a483cede1d644dea,
title = "Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling",
abstract = "Total ionizing dose effects are studied on a radiation hardened by design (RHBD) $256\times 256$ -pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X- and $\gamma $ -ray irradiations. The (color) imaging capabilities of the RHBD CIS are demonstrated up to 10 MGy (SiO2), 1 Grad (SiO2), validating the radiation hardness of most of the designed integrated circuit. No significant sensitivity (i.e., responsivity and color filter transmittance) or readout noise degradation is observed. The proposed readout chain architecture allows achieving a maximum output voltage swing larger than 1 V at 10 MGy (SiO2). The influence of several pixel layout (the gate oxide thickness, the gate overlap distance, and the use of an in-pixel P+ ring) and manufacturing process parameters (photodiode doping profile and process variation) on the radiation-induced dark current increase is studied. The nature of the dark current draining mechanism used to cancel most of the radiation-induced degradation is also discussed and clarified",
keywords = "Active pixel sensors (APS), CMOS, CMOS immage sensors (CISs), Co60, dark current, deep submicrometer (DMS) process, enclosed layout transistors (ELTs), gamma-ray, Gigarad, image sensors, integrated circuit, ionizing radiation, ITER, MAPS, Megagray, STI, TID",
author = "Vincent Goiffon and Serena Rizzolo and Franck Corbi{\`e}re and S{\'e}bastien Rolando and Sa{\"i}d Bounasser and Marius Sergent and Aziouz Chabane and Olivier Marcelot and Magali Estribeau and Pierre Magnan and Philippe Paillet and Sylvain Girard and Marc Gaillardin and Timoth{\'e} Allanche and {Van Uffelen}, Marco and {Mont Casellas}, Laura and Robin Scott and {De Cock}, Wouter",
note = "Score=10",
year = "2018",
month = jan,
day = "3",
doi = "10.1109/TNS.2017.2765481",
language = "English",
volume = "65",
pages = "101--110",
journal = "IEEE transactions on nuclear Science",
issn = "0018-9499",
publisher = "IEEE - Institute of Electrical and Electronics Engineers",
number = "1",

}

RIS - Download

TY - JOUR

T1 - Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

AU - Goiffon, Vincent

AU - Rizzolo, Serena

AU - Corbière, Franck

AU - Rolando, Sébastien

AU - Bounasser, Saïd

AU - Sergent, Marius

AU - Chabane, Aziouz

AU - Marcelot, Olivier

AU - Estribeau, Magali

AU - Magnan, Pierre

AU - Paillet, Philippe

AU - Girard, Sylvain

AU - Gaillardin, Marc

AU - Allanche, Timothé

AU - Van Uffelen, Marco

AU - Mont Casellas, Laura

AU - Scott, Robin

AU - De Cock, Wouter

N1 - Score=10

PY - 2018/1/3

Y1 - 2018/1/3

N2 - Total ionizing dose effects are studied on a radiation hardened by design (RHBD) $256\times 256$ -pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X- and $\gamma $ -ray irradiations. The (color) imaging capabilities of the RHBD CIS are demonstrated up to 10 MGy (SiO2), 1 Grad (SiO2), validating the radiation hardness of most of the designed integrated circuit. No significant sensitivity (i.e., responsivity and color filter transmittance) or readout noise degradation is observed. The proposed readout chain architecture allows achieving a maximum output voltage swing larger than 1 V at 10 MGy (SiO2). The influence of several pixel layout (the gate oxide thickness, the gate overlap distance, and the use of an in-pixel P+ ring) and manufacturing process parameters (photodiode doping profile and process variation) on the radiation-induced dark current increase is studied. The nature of the dark current draining mechanism used to cancel most of the radiation-induced degradation is also discussed and clarified

AB - Total ionizing dose effects are studied on a radiation hardened by design (RHBD) $256\times 256$ -pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X- and $\gamma $ -ray irradiations. The (color) imaging capabilities of the RHBD CIS are demonstrated up to 10 MGy (SiO2), 1 Grad (SiO2), validating the radiation hardness of most of the designed integrated circuit. No significant sensitivity (i.e., responsivity and color filter transmittance) or readout noise degradation is observed. The proposed readout chain architecture allows achieving a maximum output voltage swing larger than 1 V at 10 MGy (SiO2). The influence of several pixel layout (the gate oxide thickness, the gate overlap distance, and the use of an in-pixel P+ ring) and manufacturing process parameters (photodiode doping profile and process variation) on the radiation-induced dark current increase is studied. The nature of the dark current draining mechanism used to cancel most of the radiation-induced degradation is also discussed and clarified

KW - Active pixel sensors (APS)

KW - CMOS

KW - CMOS immage sensors (CISs)

KW - Co60

KW - dark current

KW - deep submicrometer (DMS) process

KW - enclosed layout transistors (ELTs)

KW - gamma-ray

KW - Gigarad

KW - image sensors

KW - integrated circuit

KW - ionizing radiation

KW - ITER

KW - MAPS

KW - Megagray

KW - STI

KW - TID

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/34789623

U2 - 10.1109/TNS.2017.2765481

DO - 10.1109/TNS.2017.2765481

M3 - Article

VL - 65

SP - 101

EP - 110

JO - IEEE transactions on nuclear Science

JF - IEEE transactions on nuclear Science

SN - 0018-9499

IS - 1

ER -

ID: 5417046