Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon

Research output: Contribution to journalArticle

Standard

Bibtex - Download

@article{92fa4c5fab5f4d6c88be793281efc922,
title = "Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon",
keywords = "Si, neutron transmutation, absorbers",
author = "{Vande Pitte}, Jonas and Jan Wagemans and Andrei Goussarov and Inge Uytdenhouwen",
note = "Score=10",
year = "2020",
month = "1",
doi = "10.1080/00295450.2019.1697172",
pages = "1--9",
journal = "Nuclear Technology",
issn = "0029-5450",
publisher = "Springer",

}

RIS - Download

TY - JOUR

T1 - Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon

AU - Vande Pitte,Jonas

AU - Wagemans,Jan

AU - Goussarov,Andrei

AU - Uytdenhouwen,Inge

N1 - Score=10

PY - 2020/1/21

Y1 - 2020/1/21

N2 - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.

AB - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.

KW - Si

KW - neutron transmutation

KW - absorbers

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/36852850

U2 - 10.1080/00295450.2019.1697172

DO - 10.1080/00295450.2019.1697172

M3 - Article

SP - 1

EP - 9

JO - Nuclear Technology

T2 - Nuclear Technology

JF - Nuclear Technology

SN - 0029-5450

ER -

ID: 5947131