Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon

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Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon. / Vande Pitte, Jonas; Wagemans, Jan; Uytdenhouwen, Inge; Gusarov, Andrei; Detavernier, C.; j., Lauwaert.

In: Nuclear Technology, 21.01.2020, p. 1-9.

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Vande Pitte, Jonas ; Wagemans, Jan ; Uytdenhouwen, Inge ; Gusarov, Andrei ; Detavernier, C. ; j., Lauwaert. / Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon. In: Nuclear Technology. 2020 ; pp. 1-9.

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@article{92fa4c5fab5f4d6c88be793281efc922,
title = "Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon",
abstract = "Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.",
keywords = "Neutron absorption, neutron transmutation doping, silicon, resistivity, cadmium, hafnium",
author = "{Vande Pitte}, Jonas and Jan Wagemans and Inge Uytdenhouwen and Andrei Gusarov and C. Detavernier and Lauwaert j.",
note = "Score=10",
year = "2020",
month = "1",
day = "21",
doi = "10.1080/00295450.2019.1697172",
language = "English",
pages = "1--9",
journal = "Nuclear Technology",
issn = "0029-5450",
publisher = "Springer",

}

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TY - JOUR

T1 - Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon

AU - Vande Pitte, Jonas

AU - Wagemans, Jan

AU - Uytdenhouwen, Inge

AU - Gusarov, Andrei

AU - Detavernier, C.

AU - j., Lauwaert

N1 - Score=10

PY - 2020/1/21

Y1 - 2020/1/21

N2 - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.

AB - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.

KW - Neutron absorption

KW - neutron transmutation doping

KW - silicon

KW - resistivity

KW - cadmium

KW - hafnium

UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/37188150

U2 - 10.1080/00295450.2019.1697172

DO - 10.1080/00295450.2019.1697172

M3 - Article

SP - 1

EP - 9

JO - Nuclear Technology

JF - Nuclear Technology

SN - 0029-5450

ER -

ID: 5947131