Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon
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Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon. / Vande Pitte, Jonas; Wagemans, Jan; Goussarov, Andrei; Uytdenhouwen, Inge.
In: Nuclear Technology, 21.01.2020, p. 1-9.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Use of Neutron Absorbers to Influence the neutron transmutation doping process in silicon
AU - Vande Pitte,Jonas
AU - Wagemans,Jan
AU - Goussarov,Andrei
AU - Uytdenhouwen,Inge
N1 - Score=10
PY - 2020/1/21
Y1 - 2020/1/21
N2 - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.
AB - Neutron transmutation doping is used to create high-quality silicon with a specific target resistivity. By implementing neutron absorbers, it is possible to obtain a broader range of postirradiation resistivities. To develop this method, the influence of neutron absorbers on the reactor spectrum in Belgian Reactor 1 was numerically simulated and experimentally verified. A comparison between the modeled reactor spectrum and the spectrum obtained through activation foils showed good agreement. These data were used to calculate the resistivity of silicon under cadmium and hafnium foils with different thicknesses after neutron irradiation. Experimental four-point probe measurements confirmed the calculated resistivities. Hence, the research shows that tailoring the reactor spectrum using neutron absorbers allows for a large range of final resistivities or doping concentrations in silicon during a single irradiation cycle.
KW - Si
KW - neutron transmutation
KW - absorbers
UR - http://ecm.sckcen.be/OTCS/llisapi.dll/open/36852850
U2 - 10.1080/00295450.2019.1697172
DO - 10.1080/00295450.2019.1697172
M3 - Article
SP - 1
EP - 9
JO - Nuclear Technology
T2 - Nuclear Technology
JF - Nuclear Technology
SN - 0029-5450
ER -
ID: 5947131